Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

NTD4963N-1G Fiches technique(PDF) 2 Page - VBsemi Electronics Co.,Ltd

No de pièce NTD4963N-1G
Description  N-Channel 30-V (D-S) MOSFET
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  VBSEMI [VBsemi Electronics Co.,Ltd]
Site Internet  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

NTD4963N-1G Fiches technique(HTML) 2 Page - VBsemi Electronics Co.,Ltd

  NTD4963N-1G Datasheet HTML 1Page - VBsemi Electronics Co.,Ltd NTD4963N-1G Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd NTD4963N-1G Datasheet HTML 3Page - VBsemi Electronics Co.,Ltd NTD4963N-1G Datasheet HTML 4Page - VBsemi Electronics Co.,Ltd NTD4963N-1G Datasheet HTML 5Page - VBsemi Electronics Co.,Ltd NTD4963N-1G Datasheet HTML 6Page - VBsemi Electronics Co.,Ltd NTD4963N-1G Datasheet HTML 7Page - VBsemi Electronics Co.,Ltd NTD4963N-1G Datasheet HTML 8Page - VBsemi Electronics Co.,Ltd  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
30
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = 250 µA
33
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
- 5
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
1.2
3.0
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1
µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C
5
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
15
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 10 A
0.070
Ω
VGS = 4.5 V, ID = 7 A
0.09
Forward Transconductancea
gfs
VDS = 15 V, ID = 10 A
24
S
Dynamicb
Input Capacitance
Ciss
VDS = 15 V, VGS = 0 V, f = 1 MHz
1400
pF
Output Capacitance
Coss
200
Reverse Transfer Capacitance
Crss
150
Total Gate Charge
Qg
VDS = 15 V, VGS = 10 V, ID = 10 A
33
nC
VDS = 15 V, VGS = 4.5 V, ID = 10 A
18
Gate-Source Charge
Qgs
7.3
Gate-Drain Charge
Qgd
6.2
Gate Resistance
Rg
f = 1 MHz
0.2
0.8
1.6
Ω
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
15
30
ns
Rise Time
tr
12
24
Turn-Off Delay Time
td(off)
13
26
Fall Time
tf
10
20
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
918
Rise Time
tr
918
Turn-Off Delay Time
td(off)
14
28
Fall Time
tf
816
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
16
A
Pulse Diode Forward Current
ISM
32
Body Diode Voltage
VSD
IS = 3 A, VGS = 0 V
0.78
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
17
34
ns
Body Diode Reverse Recovery Charge
Qrr
9.5
19
nC
Reverse Recovery Fall Time
ta
10
ns
Reverse Recovery Rise Time
tb
7
0
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
NTD4963N-1G
2


Numéro de pièce similaire - NTD4963N-1G

FabricantNo de pièceFiches techniqueDescription
logo
ON Semiconductor
NTD4963N-1G ONSEMI-NTD4963N-1G Datasheet
151Kb / 7P
   Power MOSFET 30 V, 44 A, Single N?묬hannel, DPAK/IPAK
December, 2009 ??Rev. 0
More results

Description similaire - NTD4963N-1G

FabricantNo de pièceFiches techniqueDescription
logo
Vishay Siliconix
SI3456DV VISHAY-SI3456DV Datasheet
61Kb / 4P
   N-Channel 30-V (D-S) MOSFET
Rev. B, 23-Nov-98
SUU50N03-12P VISHAY-SUU50N03-12P Datasheet
60Kb / 4P
   N-Channel 30-V (D-S) MOSFET
Rev. A, 15-Sep-03
SI4894DY VISHAY-SI4894DY Datasheet
129Kb / 3P
   N-Channel 30-V (D-S) MOSFET
17-May-04
SI4406DY VISHAY-SI4406DY Datasheet
38Kb / 4P
   N-Channel 30-V (D-S) MOSFET
Rev. C, 26-May-03
SI7380DP VISHAY-SI7380DP Datasheet
180Kb / 3P
   N-Channel 30-V (D-S) MOSFET
24-May-04
SI733ADP VISHAY-SI733ADP Datasheet
61Kb / 5P
   N-Channel 30-V (D-S) MOSFET
Rev. A, 25-Oct-04
SI4892DY VISHAY-SI4892DY Datasheet
71Kb / 4P
   N-Channel 30-V (D-S) MOSFET
Rev. F, 01-Aug-05
logo
Vaishali Semiconductor
SI4356ADY VAISH-SI4356ADY Datasheet
143Kb / 3P
   N-Channel 30-V (D-S) MOSFET
logo
Vishay Siliconix
SIRA00DP VISHAY-SIRA00DP Datasheet
513Kb / 13P
   N-Channel 30 V (D-S) MOSFET
Rev. A, 13-Feb-12
SIRA04DP VISHAY-SIRA04DP Datasheet
513Kb / 13P
   N-Channel 30 V (D-S) MOSFET
Rev. A, 13-Feb-12
SIRA14DP VISHAY-SIRA14DP Datasheet
513Kb / 13P
   N-Channel 30 V (D-S) MOSFET
Rev. A, 12-Mar-12
More results


Html Pages

1 2 3 4 5 6 7 8


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com