NTD4909N-35G datasheet(1/8 Pages) VBSEMI

No de pièce	NTD4909N-35G

Description	N-Channel 30-V (D-S) MOSFET

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N-Channel 30-V (D-S) MOSFET

FEATURES

•

Halogen-free

•

TrenchFET® Gen III Power MOSFET

•

100 % Rg Tested

• 100 % UIS Tested

APPLICATIONS

•

DC/DC Conversion

- System Power

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

Qg (Typ.)

30

0.07 at VGS = 10 V

53

19 nC

0.09 at VGS= 4.5 V

48

N-Channel MOSFET

G

D

S

Notes:

a. Based on TC = 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

53

A

TC = 70 °C

41

TA = 25 °C

14b, c

TA = 70 °C

10 b, c

Pulsed Drain Current

IDM

165

Avalanche Current

L = 0.1 mH

IAS

25

Avalanche Energy

EAS

40

mJ

Continuous Source-Drain Diode Current

TC = 25 °C

IS

15

A

TA = 25 °C

2.9b, c

Maximum Power Dissipation

TC = 25 °C

PD

28

W

TC = 70 °C

18

TA = 25 °C

3.5b, c

TA = 70 °C

2.2b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient

t

≤ 10 s

RthJA

29

36

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

3.6

4.5

RoHS

COMPLIANT

TO-251

S

D

G

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NTD4909N-35G

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