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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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NTD4904N-35G Datasheet(Fiches technique) 4 Page - VBsemi Electronics Co.,Ltd |
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NTD4904N-35G Datasheet(HTML) 4 Page - VBsemi Electronics Co.,Ltd |
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) On-Resistance vs. Junction Temperature RDS(on) vs. VGS vs. Temperature 0. 2 0. 4 0.6 0.8 1. 0 1. 2 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) VGS = 10 V, ID= 38.8 A VGS = 4.5 V, ID = 27 A 0.000 0.001 0.002 0.003 0.004 0.005 0246 8 10 VGS - Gate-to-Source Voltage (V) ID = 38.8 A TA = 125 °C TA = 25 °C Forward Diode Voltage vs. Temperature Threshold Voltage 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 VSD - Source-to-Drain Voltage (V) TJ = 25 °C TJ = 150 °C 0.8 1.2 1.6 2.0 2.4 2.8 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) ID = 250 µA Safe Operating Area, Junction-to-Ambient 0.001 0.01 0.1 1 10 100 1000 0.1 1 10 100 TA = 25 °C Single Pulse dc 10 s 1 s 100 ms 10 ms *Limited by rDS (on) VDS - Drain-to-Source Voltage (V) *VGS minimum VGS at which rDS(on) is specified E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw NTD4904N-35G 4 |
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