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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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AM90N02-04D Datasheet(Fiches technique) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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AM90N02-04D Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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www.doingter.cn — 2 — Electrical Characteristics：(T C=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 20 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=20V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±12V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 0.5 0.7 1.1 V RDS(ON) Drain-Source On Resistance 3 VGS=4.5V,ID=30A --- 2.9 3.5 mΩ VGS=2.5V,ID=20A --- 4.1 5 GFS --- 40 --- s Dynamic Characteristics Ciss Input Capacitance VDS=15V, VGS=0V, f=1MHz --- 2080 --- pF Coss Output Capacitance --- 280 --- Crss Reverse Transfer Capacitance --- 195 --- Switching Characteristics td(on) Turn-On Delay Time VDD=15V, VGS=4.5V ,RGEN=3Ω --- 17 --- ns tr Rise Time --- 49 --- ns td(off) Turn-Off Delay Time --- 74 --- ns tf Fall Time --- 26 --- ns Qg Total Gate Charge VGS=10V, VDS=15V, ID=12 A --- 25 --- nC Qgs Gate-Source Charge --- 3 --- nC Qgd Gate-Drain “Miller” Charge --- 8 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,IS=20A --- --- 1.2 V Is Continuous Source Current --- --- --- 90 A AM 90N02-04D |
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