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AM90N02-04D Datasheet(Fiches technique) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Numéro de pièce AM90N02-04D
Description  N-Channel MOSFET uses advanced trench technology
Télécharger  4 Pages
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Fabricant  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Site Internet  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

AM90N02-04D Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Electrical Characteristics:(T
C=25unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
20
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=20V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±12V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
0.5
0.7
1.1
V
RDS(ON)
Drain-Source On Resistance
3
VGS=4.5V,ID=30A
---
2.9
3.5
VGS=2.5V,ID=20A
---
4.1
5
GFS
---
40
---
s
Dynamic Characteristics
Ciss
Input Capacitance
VDS=15V, VGS=0V, f=1MHz
---
2080
---
pF
Coss
Output Capacitance
---
280
---
Crss
Reverse Transfer Capacitance
---
195
---
Switching Characteristics
td(on)
Turn-On Delay Time
VDD=15V, VGS=4.5V
,RGEN=3Ω
---
17
---
ns
tr
Rise Time
---
49
---
ns
td(off)
Turn-Off Delay Time
---
74
---
ns
tf
Fall Time
---
26
---
ns
Qg
Total Gate Charge
VGS=10V, VDS=15V,
ID=12 A
---
25
---
nC
Qgs
Gate-Source
Charge
---
3
---
nC
Qgd
Gate-Drain “Miller” Charge
---
8
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
VGS=0V,IS=20A
---
---
1.2
V
Is
Continuous Source Current
---
---
---
90
A
AM 90N02-04D


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