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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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AM90N02-04D Datasheet(Fiches technique) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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AM90N02-04D Datasheet(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=20V,ID=90A,RDS(ON)<3.5mΩ@VGS=4.5V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(T C=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V ID Continuous Drain Current-TC=25℃ 90 A Continuous Drain Current-TC=100℃ 60 Pulsed Drain Current 1 360 EAS Single Pulse Avalanche Energy 2 340 mJ PD Power Dissipation, TC=25℃ 87 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 1.72 ℃/W D S G AM 90N02-04D |
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