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AM90N02-04D Datasheet(Fiches technique) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Numéro de pièce AM90N02-04D
Description  N-Channel MOSFET uses advanced trench technology
Télécharger  4 Pages
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Fabricant  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Site Internet  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

AM90N02-04D Datasheet(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Description:
This N-Channel MOSFET uses advanced trench technology and
design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
Features:
1) VDS=20V,ID=90A,RDS(ON)<3.5mΩ@VGS=4.5V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra Iow RDS(ON).
5) Excellent package for good heat dissipation.
Absolute Maximum Ratings:(T
C=25unless otherwise noted)
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±12
V
ID
Continuous Drain Current-TC=25℃
90
A
Continuous Drain Current-TC=100℃
60
Pulsed Drain Current
1
360
EAS
Single Pulse Avalanche Energy
2
340
mJ
PD
Power Dissipation,
TC=25℃
87
W
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
Thermal Characteristics:
Symbol
Parameter
Max
Units
RƟJC
Thermal Resistance,Junction to Case
1.72
℃/W
D
S
G
AM 90N02-04D


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