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2SA1124 Fiches technique(PDF) 1 Page - Panasonic Semiconductor |
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2SA1124 Fiches technique(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Transistor 2SA1124 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2632 s Features q Satisfactory foward current transfer ratio hFE collector current IC characteristics. q High collector to emitter voltage VCEO. q Small collector output capacitance Cob. q Makes up a complementary pair with 2SC2632, which is opti- mum for the pre-driver stage of a 40 to 60W output amplifier. s Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package 5.9 ±0.2 2.54 ±0.15 0.7 ±0.1 4.9 ±0.2 0.45 +0.2 –0.1 1.27 1.27 0.45 +0.2 –0.1 13 2 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –150 –150 –5 –100 –50 1 150 –55 ~ +150 Unit V V V mA mA W ˚C ˚C s Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Noise voltage Symbol ICBO VCEO VEBO hFE * VCE(sat) fT Cob NV Conditions VCB = –100V, IE = 0 IC = –0.1mA, IB = 0 IE = –10µA, IC = 0 VCE = –5V, IC = –10mA IC = –30mA, IB = –3mA VCB = –10V, IE = 10mA, f = 200MHz VCE = –10V, IE = 0, f = 1MHz VCE = –10V, IC = –1mA, GV = 80dB Rg = 100kΩ, Function = FLAT min –150 –5 130 typ 200 150 max –1 450 –1 5 300 Unit µA V V V MHz pF mV *h FE Rank classification Rank R S T hFE 130 ~ 220 185 ~ 330 260 ~ 450 |
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Description similaire - 2SA1124 |
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