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TIP35C Fiches technique(PDF) 1 Page - ON Semiconductor |
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TIP35C Fiches technique(HTML) 1 Page - ON Semiconductor |
1 / 6 page 1 Motorola Bipolar Power Transistor Device Data Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • 25 A Collector Current • Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain — hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 1.0 A, f = 1.0 MHz MAXIMUM RATINGS Rating Symbol TIP35A TIP36A TIP35B TIP36B TIP35C TIP36C Unit Collector–Emitter Voltage VCEO 60 V 80 V 100 V Vdc Collector–Base Voltage VCB 60 V 80 V 100 V Vdc Emitter–Base Voltage VEB 5.0 Vdc Collector Current — Continuous Peak (1) IC 25 40 Adc Base Current — Continuous IB 5.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25 _C PD 125 1.0 Watts W/ _C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 150 _C Unclamped Inductive Load ESB 90 mJ THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θJC 1.0 _C/W Junction–To–Free–Air Thermal Resistance R θJA 35.7 _C/W (1) Pulse Test: Pulse Width = 10 ms, Duty Cycle v 10%. Figure 1. Power Derating TC, CASE TEMPERATURE (°C) 0 125 0 25 175 75 100 75 100 50 125 25 150 50 Preferred devices are Motorola recommended choices for future use and best overall value. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP35A/D © Motorola, Inc. 1996 TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C 25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 100 VOLTS 125 WATTS *Motorola Preferred Device * NPN PNP * * * CASE 340D–02 TO–218AC REV 1 |
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