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TPCF8104 Fiches technique(PDF) 1 Page - Toshiba Semiconductor |
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TPCF8104 Fiches technique(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page TOSHIBA TPCF8104 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE(U−MOSⅣ) TPCF8104 TPCF8104 TPCF8104 TPCF8104 NOTE BOOK PC APPLICATIONS PORTABLE EQUIPMENTS APPLICATIONS UNIT:mm Low Drain - Source ON Resistance:RDS(ON)=26mΩ(Typ.) ・High Forward Transfer Admittance:│Yfs│= S(Typ.) ・Low Leakage Current:IDSS=-10μA(Max.) (VDS=-30V) ・Enhancement - Mode:Vth=-0.8 ∼ -2.0V(VDS=-10V,ID=-1mA) MAXIMUM RATINGS(Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Drain - Source Voltage VDSS -30 V Drain - Gate Voltage (RGS=20kΩ) VDGR -30 V Gate - Source Voltage VGSS ±20 V DC (Note1) ID -6 A Drain Current Pulse (Note1) IDP -24 A Drain Power Dissipation (t=5s) (Note2a) PD 2.5 W Drain Power Dissipation (t=5s) (Note2b) PD 0.7 W Single Pulse Avalanche Energy(Note3) EAS 5.9 mJ Avalanche Current IAR 3 A Repetitive Avalanche Energy (Note4) EAR 0.25 mJ Channel Temperature Tch 150 ℃ Storage Temperature Range Tstg −55∼150 ℃ THERMAL CHARACTERISTICS CHARACTERISTICS SYMBOL MAX. UNIT Thermal Resistance, Channel to Ambient (t=5s) (Note2a) Rth(ch−a) 50.0 ℃/W Thermal Resistance, Channel to Ambient (t=5s) (Note2b) Rth(ch−a) 178.6 ℃/W Note1, Note2, Note3, Note4, Note5 Please see next page. THIS TRANSISTOR IS AN ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. Tentative Tentative Tentative Tentative JEDEC ― JEITA ― TOSHIBA ― 1. Drain 2. Drain 3. Gat 4. Source 5. Drain 6 Drain 0.05 2.9 ±0.2 0.3 ±0.1 0.95 0.25 -0.15 +0.25 1 4 3 6 0.95 1:DRAIN 5:SOURCE 2:DRAIN 6:DRAIN 3:DRAIN 7:DRAIN 4:GATE 8:DRAIN 2.9±0.1 0.3 +0.1 /− 005 0.65 0.8±0.05 1111 4444 5555 8888 0.475 0.025 M A A S 0.05 S Circuit Configuration 1 2 3 4 8 7 6 5 |
Numéro de pièce similaire - TPCF8104 |
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Description similaire - TPCF8104 |
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