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DL-100-7-KERSMD Datasheet(Fiches technique) 1 Page - List of Unclassifed Manufacturers

Numéro de pièce DL-100-7-KERSMD
Description  Position Sensing Photodiodes Special characteristics
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Fabricant  ETC1 [List of Unclassifed Manufacturers]
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DL-100-7-KERSMD Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers

  DL-100-7-KERSMD Datasheet HTML 1Page - List of Unclassifed Manufacturers DL-100-7-KERSMD Datenblatt HTML 2Page - List of Unclassifed Manufacturers  
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Position Sensing
Photodiodes
Special characteristics:
dual-axis, duo-lateral PSD
active area 10 x 10 mm
high position resolution and
high linearity
CATHODE 1
21.0 ± 0.2
ANODE 2
ANODE 1
CATHODE 2
1.6
Chip: DL-100-7
Active area:
(10 x 10) mm
2
DL-100-7-KER SMD
Parameters:
DL-100-7-KER SMD
active area
10 x 10 mm
100 mm
2
Dark current
at 10 V
max. 300 nA
typ. 80 nA
Capacitance
at 10 V, 100 kHz
typ. 75 pF
Spectral responsivity
at 633 nm
at 850 nm
typ. 0,4 A/W
typ. 0,62 A/W
Interelectrode resistance
at E = 0 lx
typ. 12 k
Rise time
at 10 V, 50
Ω, 865 nm
typ. 4 µs
Noise limited resolution
at 632 nm, 0.5 µW
0.2 µm
Position Detection Error
1)
at 632 nm
+/- 1%
Breakdown voltage
typ. 30 V
Package
Ceramic S.M.
Operating temperature
Storage temperature
-20 ... +70°C
-60 ... +100°C
1) measurement conditions:
Spot size: 0,5 mm,
Scan Interval: 1 mm
Wavelength: 633 nm
Package 22 (SMD)
www.silicon-sensor.com
www.pacific-sensor.com
Version: 02-09-06
10.16
15.24
(2.54)
1.6
SMD - Kontaktrückseite
SMD - back contact


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