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MMDF3N03HD Fiches technique(PDF) 2 Page - ON Semiconductor |
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MMDF3N03HD Fiches technique(HTML) 2 Page - ON Semiconductor |
2 / 12 page MMDF3N03HD http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) V(BR)DSS 30 – – 34.5 – – Vdc mV/ °C Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS – – – – 1.0 10 µAdc Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS – – 100 nAdc ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) VGS(th) 1.0 1.7 3.0 Vdc mV/ °C Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 3.0 Adc) (VGS = 4.5 Vdc, ID = 1.5 Adc) RDS(on) – – 0.06 0.065 0.07 0.075 Ohms Forward Transconductance (VDS = 3.0 Vdc, ID = 1.5 Adc) gFS 2.0 3.6 – Mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 24 Vd V 0 Vd Ciss – 450 630 pF Output Capacitance (VDS = 24 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss – 160 225 Transfer Capacitance f = 1.0 MHz) Crss – 35 70 SWITCHING CHARACTERISTICS (Note 3.) Turn–On Delay Time td(on) – 12 24 ns Rise Time (VDD = 15 Vdc, ID = 3.0 Adc, VGS =45Vdc tr – 65 130 Turn–Off Delay Time VGS = 4.5 Vdc, RG = 9.1 Ω) td(off) – 16 32 Fall Time RG 9.1 Ω) tf – 19 38 Turn–On Delay Time td(on) – 8 16 ns Rise Time (VDD = 15 Vdc, ID = 3.0 Adc, VGS =10Vdc tr – 15 30 Turn–Off Delay Time VGS = 10 Vdc, RG = 9.1 Ω) td(off) – 30 60 Fall Time RG 9.1 Ω) tf – 23 46 Gate Charge QT – 11.5 16 nC (VDS = 10 Vdc, ID = 3.0 Adc, Q1 – 1.5 – (VDS 10 Vdc, ID 3.0 Adc, VGS = 10 Vdc) Q2 – 3.5 – Q3 – 2.8 – SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (Note 2.) (IS = 3.0 Adc, VGS = 0 Vdc) (IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125°C) VSD – – 0.82 0.7 1.2 – Vdc Reverse Recovery Time SFi 12 (I 30Ad V 0Vd trr – 24 – ns See Figure 12 (IS = 3.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) ta – 17 – dIS/dt = 100 A/µs) tb – 7 – Reverse Recovery Storage Charge QRR – 0.025 – µC 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperature. |
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