FCA16N60 datasheet(3/8 Pages) FAIRCHILD

No de pièce	FCA16N60

Description	600V N-Channel MOSFET

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Fabricant	FAIRCHILD [Fairchild Semiconductor]

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FCA16N60 REV. A

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

10

-1

10

0

10

1

10

0

10

1

10

2

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom : 5.5 V

♦ Notes :

1. 250µS Pulse Test

2. T

C = 25°C

V

DS, Drain-Source Voltage [V]

24

6

8

10

0

10

1

10

2

♦Note

1. V

DS = 40V

2. 250µs Pulse Test

-55°C

150°C

25°C

V

GS , Gate-Source Voltage [V]

0

5

10

15

20

25

30

35

40

45

50

0.0

0.1

0.2

0.3

0.4

0.5

0.6

V

GS = 20V

V

GS = 10V

♦ Note : T

J = 25 °C

I

D, Drain Current [A]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

10

0

10

1

10

2

25°C

150°C

♦ Notes :

1. V

GS = 0V

2. 250 µs Pulse Test

V

SD , Source-Drain Voltage [V]

10

-1

10

0

10

1

0

1000

2000

3000

4000

5000

6000

7000

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

♦ Notes :

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

0

1020

3040

5060

0

2

4

6

8

10

12

V

DS = 250V

V

DS = 100V

V

DS = 480V

♦ Note : I

D = 16A

Q

G, Total Gate Charge [nC]

Numéro de pièce similaire - FCA16N60

Fabricant	No de pièce	Fiches technique	Description
Fairchild Semiconductor	FCA16N60	962Kb / 9P	600V N-Channel MOSFET
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Description similaire - FCA16N60

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