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WSD75100DN56 Fiches technique(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSD75100DN56 Fiches technique(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
2 / 7 page Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 75 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.043 --- V/℃ RDS(ON) Static Drain-Source On-Resistance2 --- 5.3 6.4 mΩ VGS(th) Gate Threshold Voltage 2.0 3.0 4.0 V △ VGS(th) VGS(th) Temperature Coefficient VGS=VDS , ID =250uA --- -6.94 --- mV/℃ VDS=48V , VGS=0V , TJ=25℃ --- --- 2 IDSS Drain-Source Leakage Current VDS=48V , VGS=0V , TJ=55℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ± 100 nA gfs Forward Transconductance VDS=5V , ID=20A --- 50 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.0 2 Ω Qg Total Gate Charge (10V) --- 65 85 Qgs Gate-Source Charge --- 20 --- Qgd Gate-Drain Charge VDS=20V , VGS=10V , ID=40A --- 17 --- nC Td(on) Turn-On Delay Time --- 27 49 Tr Rise Time --- 14 26 Td(off) Turn-Off Delay Time --- 60 108 Tf Fall Time VDD=30V , VGEN=10V , RG=1Ω, ID=1A ,RL=15Ω. --- 37 67 ns Ciss Input Capacitance 3500 Coss Output Capacitance 395 Crss Reverse Transfer Capacitance VDS=20V , VGS=0V , f=1MHz 195 pF Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy5 VDD=25V , L=0.5mH , IAS=30A 198 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current1,6 --- --- 50 A ISM Pulsed Source Current2,6 VG=VD=0V , Force Current --- --- 100 A VSD Diode Forward Voltage2 VGS=0V , IS=20A , TJ=25℃ --- --- 1.4 V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t<10sec . 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.5mH,IAS=30A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 7.Package limitation current is 100A. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics VGS=10V , ID=25A N-Ch MOSFET WSD75100DN56 Page 2 www.winsok.tw Dec.2014 --- --- --- --- --- --- |
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