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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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DRV8353M Fiches technique(PDF) 62 Page - Texas Instruments |
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DRV8353M Fiches technique(HTML) 62 Page - Texas Instruments |
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62 / 76 page  Use Equation 26 to calculate the value of IVCP and IVGLS for a MOSFET gate charge of 78 nC, all 3 high-side and 3 low-side MOSFETs switching, and a switching frequency of 45 kHz. IVCP/VGLS = 78 nC × 3 × 45 kHz = 10.5 mA (26) Use Equation 27, Equation 28, Equation 29, Equation 30, and Equation 31 to calculate the value of Ptot for VVM = VVDRAIN = VVIN = 48 V, IVM = 9.5 mA, IVCP = 10.5 mA, IVGLS = 10.5 mA, VVCC = 3.3 V, IVCC = 100 mA, and η = 86 %. PVCP = 10.5 mA × (48 V + 48 V) = 1 W (27) PVGLS = 10.5 mA × 48 V = 0.5 W (28) PVM = 9.5 mA × 48 V = 0.5 W (29) PBUCK = [(3.3 V × 100 mA) / 0.86] – (3.3 V × 100 mA) = 0.054 W (30) Ptot = 1 W + 0.5 W + 0.5 W + 0.054 = 2.054 W (31) Lastly, to estimate the device junction temperature during operation, use Equation 32 to calculate the value of TJmax for TAmax = 60°C, RθJA = 26.6°C/W for the RGZ package, and Ptot = 2.054 W. Again, please note that the RθJA is highly dependent on the PCB design used in the actual application and should be verified. For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. TJmax = 60°C + (26.6°C/W × 2.054 W) = 115°C (32) As shown in this example, the device is within its operational limits, but is operating almost to its maximum operational junction temperature. Design care should be taken in the single supply configuration to correctly manage the power dissipation of the device. 14.2.1.3 Application Curves Figure 14-2. Gate Driver Operation 30% Duty Cycle Figure 14-3. Gate Driver Operation 90% Duty Cycle DRV8353M SLVSFO2 – JULY 2020 www.ti.com 62 Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: DRV8353M |
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