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BQ24160 Fiches technique(PDF) 34 Page - Texas Instruments |
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BQ24160 Fiches technique(HTML) 34 Page - Texas Instruments |
34 / 53 page SW SYS BAT BGATE TS DRV PGND PMIDU USB SDA INT BOOT VSYS (1.8V) PMIDI IN System Load GSM PA STAT D+ VBUS D+ D- GND ADAPTER SCL HOST SCL SDA GPIO1 TEMP PACK+ PACK- VDRV bq24160 D- 1 F m 4.7 F m 1 F m 4.7 F m 1 F m 0.01 F m 10 F m 1.5 H m 1 F m 34 bq24160, bq24160A, bq24161 bq24161B, bq24163, bq24168 SLUSAO0G – NOVEMBER 2011 – REVISED DECEMBER 2015 www.ti.com Product Folder Links: bq24160 bq24160A bq24161 bq24161B bq24163 bq24168 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated 10 Application and Implementation 10.1 Application Information A typical application circuit using the bq24160 with a smartphone's GSM power amplifier (PA) powered directly from the battery is shown in Figure 21. A typical application circuit using the bq24161 with a smartphone's GSM PA powered from the SYS rail, to allow for calls even with a deeply discharged battery, is shown in Figure 22. Each circuit shows the minimum capacitance requirements for each pin and typical recommended inductance value of 1.5 µH. The TS resistor divider for configuring the TS function for the battery's specific thermistor can be computed from equations Equation 1 and Equation 2. The resistor on STAT is sized per the LED current requirements. All other configuration settings for VINDPM, input current limit, charge current and charge voltage are made in EEPROM registers using I2C commands. Options for sizing the inductor outside the 1.5 µH recommended value and additional SYS pin capacitance are explained in the next section. 10.2 Typical Application Figure 21. bq24160, Shown with no External Discharge FET, PA Connected to Battery |
Numéro de pièce similaire - BQ24160_V01 |
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Description similaire - BQ24160_V01 |
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