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WSD3028DN Fiches technique(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSD3028DN Fiches technique(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
1 / 5 page Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ± 20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 25 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 18 A ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 19 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 15 A IDM Pulsed Drain Current2 40 A EAS Single Pulse Avalanche Energy3 21 mJ IAS Avalanche Current 15 A PD@TC=25℃ Total Power Dissipation4 5 W PD@TA=25℃ Total Power Dissipation4 2.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 50 ℃ /W RθJC Thermal Resistance Junction-Case1 --- 4 ℃ /W BVDSS RDSON ID 30V 25mΩ 19A Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available General Description Features Applications High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System Load Switch Absolute Maximum Ratings Thermal Data DFN3 .3X3.3-8L Pin Configuration Product Summery WSD3028DN Page 1 www.winsok.tw Dec.2014 N-Ch MOSFET The WSD3028DN is the highest performance trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSD3028DN meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. |
Numéro de pièce similaire - WSD3028DN |
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Description similaire - WSD3028DN |
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