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JN5189 Fiches technique(PDF) 59 Page - NXP Semiconductors |
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JN5189 Fiches technique(HTML) 59 Page - NXP Semiconductors |
59 / 92 page JN5189 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2020. All rights reserved. Product data sheet Rev. 1.2 — June 2020 59 of 92 NXP Semiconductors IEEE 802.15.4 low power wireless MCU JN5189(T)/JN5188(T) [1] Number of erase/program cycles, for Junction temperature range -40°C to 85°C [2] Number of erase/program cycles, for Junction temperature range -40°C to 125°C 14.3 IO pins [1] Simulated data. [2] PIO I2C values are for PIO10 and PIO11. IO cell in GPIO mode. Slow speed is EHS=0; Fast speed is EHS=1 terase Erase time 1 Page (512 Bytes) 1.878 ms tblank Blank status time 1 Page (512 Bytes) 21 s tprog Programming time 1 Page (512 Bytes) 1.09 ms Table 27. Flash memory VDDE = 1.9 V to 3.6 V; Tj = −40 °C to +125 °C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Table 28. Dynamic characteristic: I/O pins[1] VDDE = 1.9 V to 3.6 V; Tj = −40 °C to +125 °C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit PIO I2C[2] tR Rise time Slow speed, 3.3 V 12 22 ns Slow speed 1.9 V 14 28 ns Fast speed 3.3 V 1.7 5ns Fast speed 1.9 V 3.2 7.5 ns tF Fall time Slow speed, 3.3 V 14 29 ns Slow speed 1.9 V 18 34 ns Fast speed 3.3 V 1.1 2.6 ns Fast speed 1.9 V 2 4.7 ns PIO HS[3] tR Rise time Slow speed, 3.3 V 1.6 4ns Slow speed 1.9 V 2.4 6ns Fast speed 3.3 V 0.8 3ns Fast speed 1.9 V 1.2 4ns tF Fall time Slow speed, 3.3 V 1.1 3.3 ns Slow speed 1.9 V 1.6 5ns Fast speed 3.3 V 0.6 3ns Fast speed 1.9 V 0.9 3.5 ns PIO LS[4][5] tR Rise time Slow speed, 3.3 V 2.2 5ns Slow speed 1.9 V 3.3 7.5 ns Fast speed 3.3 V 1.6 4ns Fast speed 1.9 V 2.5 6.5 ns tF Fall time Slow speed, 3.3 V 1.2 3.5 ns Slow speed 1.9 V 1.9 5ns Fast speed 3.3 V 0.7 3ns Fast speed 1.9 V 1.1 3.5 ns |
Numéro de pièce similaire - JN5189 |
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