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AD500-9 Fiches technique(PDF) 1 Page - List of Unclassifed Manufacturers

No de pièce AD500-9
Description  Avalanche Photodiode NIR
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AD500-9 Fiches technique(HTML) 1 Page - List of Unclassifed Manufacturers

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Avalanche Photodiode NIR
Special characteristics:
quantum efficiency > 80 % at λ 760 - 910 nm
high speed, low noise
500 µm diameter active area
low slope multiplication curve
AD500-9 TO52S1
Parameters:
AD500-9 TO52S1
Active Area
0.196 mm
2
Ø 500 µm
Dark Current
1)
(M = 100)
max. 5 nA
typ. 0.5 - 1 nA
Total Capacitance
1)
(M = 100)
typ. 1.2 pF
Breakdown Voltage UBR
(at ID = 2 µA)
120 … 300 V
typ. > 200 V
Temperature Coefficient of UBR
typ. 1.55 V/K
Spectral Responsivity
1)
(at 905 nm, M = 100)
min. 55 A/W
typ. 60 A/W
Cut-off Frequency
(-3dB)
typ. 0.5 GHz
Rise Time
typ. 550 ps
Optimum Gain
50 - 60
Max. Gain
> 200
“Excess Noise” factor
(M = 100)
typ. 2.5
“Excess Noise” index
(M = 100)
typ. 0.2
Noise Current
(M = 100)
typ. 1 pA/Hz
1/2
N.E.P.
(M = 100, 905 nm)
typ. 2* 10
-14 W/Hz1/2
Operating Temperature
Storage Temperature
-20 ... +70 °C
-60 ... +100 °C
1) measurement conditions:
Setup of photo current 10 nA at M = 1 and irradiation by an IRED
(880 nm, 80 nm bandwith).
Increase the photo current up to 1 µA, (M = 100) by internal multiplication
due to an increasing bias voltage.
Package (TO52S1):
www.silicon-sensor.com
www.pacific-sensor.com
Version: 05-04-29
Specification before: SSO-AD-500-9-TO52-S1
∅ 5.4 ± 0.2
∅ 2.54
1
3
4
45°
CATHODE
ANODE
CASE
Chip: AD500-9
diam. active area: 100 µm
1
3
4
view without
window cap
∅ 2.0 min.
∅ 4.7 ± 0.1
∅ 3.0 ± 0.1
∅ 0.45


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