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TSM1N60 Fiches technique(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

No de pièce TSM1N60
Description  N-Channel Power Enhancement Mode MOSFET
Download  4 Pages
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Fabricant  TSC [Taiwan Semiconductor Company, Ltd]
Site Internet  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSM1N60 Fiches technique(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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TSM1N60
2-4
2003/12 rev. E
Electrical Characteristics
Tj = 25
oC, unless otherwise noted
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
600
--
--
V
Drain-Source On-State Resistance
VGS = 10V, ID = 0.6A
RDS(ON)
--
--
8.0
Gate Threshold Voltage
VDS = VGS, ID = 250uA
VGS(TH)
2.0
--
4.0
V
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
IDSS
--
--
10
uA
Gate Body Leakage
VGS = ± 20V, VDS = 0V
IGSS
--
--
± 100
nA
Forward Transconductance
VDS ≧50V, ID = 0.5A
gfs
--
10
--
S
Dynamic
Total Gate Charge
Qg
--
8.5
14
Gate-Source Charge
Qgs
--
1.8
--
Gate-Drain Charge
VDS = 400V, ID = 1.0A,
VGS = 10V
Qgd
--
4
--
nC
Turn-On Delay Time
td(on)
--
8
Turn-On Rise Time
tr
--
21
Turn-Off Delay Time
td(off)
--
18
Turn-Off Fall Time
VDD = 300V, RL = 18Ω,
ID = 1A, VGEN = 10V,
RG = 6Ω
tf
--
24
nS
Input Capacitance
Ciss
--
210
--
Output Capacitance
Coss
--
28
--
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Crss
--
4.2
--
pF
Source-Drain Diode
Max. Diode Forward Current
IS
--
--
1.0
A
Diode Forward Voltage
IS = 1.0A, VGS = 0V
VSD
--
--
1.5
V
Note: 1. pulse test: pulse width <=300uS, duty cycle <=2%
2. Negligible, Dominated by circuit inductance.


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