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TSC2411CXP Fiches technique(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSC2411CXP Fiches technique(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 3 page TSC2411 1-1 2003/12 rev. B TSC2411 General Purpose NPN Transistor BVCEO = 40V Ic = 600mA VCE (SAT), = 0.2V(typ.) @Ic / Ib = 500mA / 50mA Features Driver stage of AF amplifier. General purpose switching application Structure Epitaxial planar type. Complementary to TSA1036CX Ordering Information Part No. Packing Package Marking TSC2411CX 3kpcs / Reel SOT-23 2X Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 60V V Collector-Emitter Voltage VCEO 40V V Emitter-Base Voltage VEBO 6 V Collector Current IC 0.6 A Collector Power Dissipation PD 225 mW Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Note: 1. Single pulse, Pw = 380uS, Duty <= 2% Electrical Characteristics Ta = 25 oC unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC = 100uA, IE = 0 BVCBO 60 -- -- V Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 BVCEO 40 -- -- V Emitter-Base Breakdown Voltage IE = 10uA, IC = 0 BVEBO 6 -- -- V Collector Cutoff Current VCB = 20V, IE = 0 ICBO -- -- 0.1 uA Emitter Cutoff Current VEB = 4V, IC = 0 IEBO -- -- 0.1 uA Collector-Emitter Saturation Voltage IC / IB = 150mA / 15mA VCE(SAT)1 -- -- 0.4 V Collector-Emitter Saturation Voltage IC / IB = 500mA / 50mA VCE(SAT)2 -- 0.20 0.75 V DC Current Transfer Ratio VCE = 1V, IC = 0.15A hFE 82 -- 390 Transition Frequency VCE =10V, IC=20mA, f=100MHz fT -- 250 -- MHz Output Capacitance VCB = 5V, f=1MHz Cob -- -- 6.5 pF Note : pulse test: pulse width <=380uS, duty cycle <=2% Classification Of hFE Rank P Q R Range 82 - 180 120 - 270 180 - 390 Pin assignment: 1. Base 2. Emitter 3. Collector |
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