Moteur de recherche de fiches techniques de composants électroniques
Selected language     French  ▼
Nom de la pièce
         Description


TS13003HV Datasheet(Fiches technique) 1 Page - Taiwan Semiconductor Company, Ltd

Numéro de pièce TS13003HV
Description  High Voltage NPN Transistor
Télécharger  3 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Fabricant  TSC [Taiwan Semiconductor Company, Ltd]
Site Internet  http://www.taiwansemi.com
Logo 

   
 1 page
background image
TS13003HV
1-3
2004/09 rev. A
TS13003HV
High Voltage NPN Transistor
Pin assignment:
1. Emitter
2. Collector
3. Base
BVCEO = 530V
BVCBO = 900V
Ic = 1.5A
VCE (SAT), = 0.5V @ Ic / Ib = 0.5A / 0.1A
Features
High voltage.
High speed switching
Structure
Silicon triple diffused type.
NPN silicon transistor
Ordering Information
Part No.
Packing
Package
TS13003HVCT B0
Bulk Pack
TO-92
TS13003HVCT A3
Ammo Pack
TO-92
Absolute Maximum Rating (Ta = 25
oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
900V
V
Collector-Emitter Voltage
VCEO
530V
V
Emitter-Base Voltage
VEBO
10
V
DC
1.5
Collector Current
Pulse
IC
3
A
Collector Power Dissipation
PD
0.6
W
Operating Junction Temperature
TJ
+150
oC
Operating Junction and Storage Temperature Range
TSTG
- 55 to +150
oC
Note: 1. Single pulse, Pw = 300uS, Duty <= 2%
Electrical Characteristics (Ta = 25
oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
IC = 10mA, IB = 0
BVCBO
900
--
--
V
Collector-Emitter Breakdown Voltage
IC = 10mA, IE = 0
BVCEO
530
--
--
V
Emitter-Base Breakdown Voltage
IE = 1mA, IC = 0
BVEBO
9
--
--
V
Collector Cutoff Current
VCB = 800V, IE = 0
ICBO
--
--
10
uA
Emitter Cutoff Current
VEB = 10V, IC = 0
IEBO
--
--
0.5
uA
Collector-Emitter Saturation Voltage
IC / IB = 1.5A / 0.5A
IC / IB = 0.5A / 0.1A
VCE(SAT)1
VCE(SAT)2
--
--
--
--
2.5
0.8
V
DC Current Gain
VCE = 10V, IC = 10uA
VCE = 10V, IC = 0.4A
VCE = 10V, IC = 1.0A
hFE
15
20
6
--
--
--
40
40
40
Frequency
VCE = 10V, IC = 0.1A
fT
4
--
--
MHz
Output Capacitance
VCB = 10V, f = 0.1MHz
Cob
--
21
--
pF
Turn On Time
tON
--
1.1
--
uS
Storage Time
tSTG
--
--
4
uS
Fall Time
VCC = 125V, IC = 1A,
IB1 = 0.2A, IB2 = - 0.2A,
RL = 125ohm
tf
--
--
0.7
uS
Note : pulse test: pulse width <=300uS, duty cycle <=2%




Html Pages

1  2  3 


Datasheet Download



Numéro de composants électroniques

Numéro de pièceDescription des composantsHtml ViewFabricant
BU109NPN HIGH VOLTAGE SILICON POWER TRANSISTOR 1 2 3 Continental Device India Limited
NTE2300Silicon NPN Transistor High Voltage Horizontal Output 1 2 NTE Electronics
NTE2327Silicon NPN Transistor High Voltage High Speed Switch 1 2 NTE Electronics
NTE2538Silicon NPN Transistor High Voltage High Current Switch 1 2 NTE Electronics
NTE399Silicon NPN Transistor High Voltage Video Amp Compl to NTE2366 1 2 NTE Electronics
NTE52Silicon NPN Transistor High Voltage High Speed Switch 1 2 3 NTE Electronics
2N5551CEPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE HIGH VOLTAGE 1 2 KEC(Korea Electronics)
BUH315HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 1 2 3 4 5 MoreSTMicroelectronics
BUL310FPHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 1 2 3 4 5 MoreSTMicroelectronics
MJD47HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 1 2 3 4 5 MoreSTMicroelectronics

Lien URL

AllDATASHEET vous a-t-il été utile ?   [ DONATE ]  

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Favoris   |   Echange de liens   |   Fabricants
All Rights Reserved © Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl