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FMS2013 Fiches technique(PDF) 5 Page - Filtronic Compound Semiconductors

No de pièce FMS2013
Description  SPDT GaAs High Isolation Absorptive Switch DC-4 GHz
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Fabricant  FILTRONIC [Filtronic Compound Semiconductors]
Site Internet  http://www.filtronic.co.uk/
Logo FILTRONIC - Filtronic Compound Semiconductors

FMS2013 Fiches technique(HTML) 5 Page - Filtronic Compound Semiconductors

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Preliminary Data Sheet 2.1
5
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790
Fax: +1 (408) 850 5766
Email: sales@filss.com
Website: www.filcs.com
FMS2013
Ordering Information:
Part Number
Description
FMS2013-000-WP
FMS2013-000-GP
Die – waffle pak
Die – gel pak
FMS2013-000-EB
Die mounted on evaluation board
FMS2013-000-FF
Wafer mounted on film frame
Preferred Assembly Instructions:
GaAs devices are fragile and should be handled with great care. Specially designed collets should be
used where possible.
The back of the die is not metallised and the recommended mounting method is by the use of
conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid
encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height.
For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1
LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150
°C for 1 hour in
an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with
dry nitrogen.
This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire.
It is
recommended that 25.4
µm diameter gold wire is used. Thermosonic ball bonding is preferred. A
nominal stage temperature of 150°C and a bonding force of 40g has been shown to give effective
results for 25
µm wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique,
stage temperature should not be raised above 200°C and bond force should not be raised above 60g.
Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve
good wire bonds.
Bonds should be made from the die first and then to the mounting substrate or package. The physical
length of the bondwires should be minimised especially when making RF or ground connections.
Handling Precautions:
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No.
22-A114-B. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-
HDBK-263.
Disclaimers:
This product is not designed for use in any space based or life sustaining/supporting equipment.


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