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MJD117 Fiches technique(PDF) 1 Page - First Silicon Co., Ltd |
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MJD117 Fiches technique(HTML) 1 Page - First Silicon Co., Ltd |
1 / 3 page TO-252-2L 1. BASE 2. COLLECTOR 3. EMITTER MJD117 TRANSISTOR (PNP) FEATURES High DC Current Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) t i n U x a M p y T n i M s n o i t i d n o c t s e T l o b m y S r e t e m a r a P Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -100 V Collector-emitter breakdown voltage V(BR)CEO * IC=-30mA,IB=0 -100 V Emitter-base breakdown voltage V(BR)EBO IE=-5mA,IC=0 -5 V Collector cut-off current ICBO VCB=-80V,IE=0 -10 μA Collector cut-off current ICEX VCE=-80V, VBE(off)=-1.5V -10 μA Emitter cut-off current IEBO VEB=-5V,IC A m 2 - 0 = hFE(1) * VCE=-3V, IC=-0.5A 500 hFE(2) * VCE=-3V, IC=-2A 1000 12000 DC current gain hFE(3) * VCE=-3V, IC=-4A 200 IC=-2A,IB=-8mA -2 V Collector-emitter saturation voltage VCE(sat) * IC=-4A,IB=-40mA -3 V Base-emitter saturation voltage VBE(sat) * IC=-4A,IB=-40mA -4 V Base-emitter voltage VBE * VCE=-3V, IC=-2A -2.8 V Collector output capacitance Cob VCB=-10V,IE=0, f=0.1MHz 200 pF Transition frequency fT VCE=-10V,IC=-0.75A, f=1MHz 25 MHz *Pulse test t i n U e u l a V r e t e m a r a P l o b m y S VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO V 5 - e g a t l o V e s a B - r e t t i m E IC A 2 - t n e r r u C r o t c e ll o C PC W 5 7 . 1 n o i t a p i s s i D r e w o P r o t c e ll o C RθJA Thermal Resistance From Junction To Ambient 72 ℃/W Tj 0 5 1 e r u t a r e p m e T n o i t c n u J ℃ Tstg 0 5 1 + ~ 5 5 - e r u t a r e p m e T e g a r o t S ℃ SEMICONDUCTOR TECHNICAL DATA MJD117 2018. 02. 19 1/3 Revision No : 0 |
Numéro de pièce similaire - MJD117 |
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Description similaire - MJD117 |
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