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MJ10009 Fiches technique(PDF) 1 Page - ON Semiconductor

No de pièce MJ10009
Description  NPN SILICON POWER DARLINGTON TRANSISTORS
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MJ10009 Fiches technique(HTML) 1 Page - ON Semiconductor

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Motorola Bipolar Power Transistor Device Data
Designer's™ Data Sheet
SWITCHMODE Series
NPN Silicon Power Darlington
Transistor with Base-Emitter
Speedup Diode
The MJ10009 Darlington transistor is designed for high–voltage, high–speed,
power switching in Inductive circuits where fall time is critical. It is particularly suited
for line operated switchmode applications such as:
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits
Fast Turn–Off Times
1.6
µs (max) Inductive Crossover Time – 10 A, 100_C
3.5
µs (max) Inductive Storage Time – 10 A, 100_C
Operating Temperature Range – 65 to + 200
_C
100
_C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
500
Vdc
Collector–Emitter Voltage
VCEX
500
Vdc
Collector–Emitter Voltage
VCEV
700
Vdc
Emitter Base Voltage
VEB
8
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
20
30
Adc
Base Current — Continuous
— Peak (1)
IB
IBM
2.5
5
Adc
Total Power Dissipation @ TC = 25_C
@ TC = 100_C
Derate above 25
_C
PD
175
100
1
Watts
W/
_C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 65 to + 200
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1
_C/W
Maximum Lead Temperature for Soldering Purposes: 1/8
″ from Case for 5 Seconds
TL
275
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v 10%.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ10009/D
© Motorola, Inc. 1995
20 AMPERE
NPN SILICON
POWER DARLINGTON
TRANSISTORS
450 and 500 VOLTS
175 WATTS
MJ10009
CASE 1–07
TO–204AA
(TO–3)
*
*Motorola Preferred Device
≈ 100
≈ 15
REV 2


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