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MJ10009 Fiches technique(PDF) 1 Page - ON Semiconductor |
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1 / 8 page 1 Motorola Bipolar Power Transistor Device Data Designer's™ Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode The MJ10009 Darlington transistor is designed for high–voltage, high–speed, power switching in Inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as: • Switching Regulators • Inverters • Solenoid and Relay Drivers • Motor Controls • Deflection Circuits Fast Turn–Off Times 1.6 µs (max) Inductive Crossover Time – 10 A, 100_C 3.5 µs (max) Inductive Storage Time – 10 A, 100_C Operating Temperature Range – 65 to + 200 _C 100 _C Performance Specified for: Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 500 Vdc Collector–Emitter Voltage VCEX 500 Vdc Collector–Emitter Voltage VCEV 700 Vdc Emitter Base Voltage VEB 8 Vdc Collector Current — Continuous — Peak (1) IC ICM 20 30 Adc Base Current — Continuous — Peak (1) IB IBM 2.5 5 Adc Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above 25 _C PD 175 100 1 Watts W/ _C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 200 _C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θJC 1 _C/W Maximum Lead Temperature for Soldering Purposes: 1/8 ″ from Case for 5 Seconds TL 275 _C (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%. Designer’s and SWITCHMODE are trademarks of Motorola, Inc. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ10009/D © Motorola, Inc. 1995 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS MJ10009 CASE 1–07 TO–204AA (TO–3) * *Motorola Preferred Device ≈ 100 ≈ 15 REV 2 |
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