SI7390DP-T1 datasheet(3/5 Pages) VISHAY

No de pièce	SI7390DP-T1

Description	N-Channel 30-V (D-S) Fast Switching WFET

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Fabricant	VISHAY [Vishay Siliconix]

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Document Number: 72214

S-51773-Rev. C, 31-Oct-05

www.vishay.com

3

Vishay Siliconix

Si7390DP

New Product

TYPICAL CHARACTERISTICS

25 °C unless noted

On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage

0.000

0.006

0.012

0.018

0.024

0.030

0

1020304050

ID - Drain Current (A)

VGS = 10 V

VGS = 4.5 V

0

1

2

3

4

5

6

0369

12

15

VDS = 15 V

ID = 12.5 A

Qg - Total Gate Charge (nC)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

TJ = 25˚C

50

10

0.1

VSD - Source-to-Drain Voltage (V)

1

TJ = 150˚C

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0

300

600

900

1200

1500

1800

0

6

12

18

24

30

VDS - Drain-to-Source Voltage (V)

Crss

Coss

Ciss

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50

- 25

0

25

50

75

100

125

150

VGS = 10 V

ID = 12.5 A

TJ - Junction Temperature (˚C)

0.000

0.008

0.016

0.024

0.032

0.040

02468

10

ID = 12.5 A

VGS - Gate-to-Source Voltage (V)

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Fabricant	No de pièce	Fiches technique	Description
Vaishali Semiconductor	SI4362BDY	186Kb / 3P	N-Channel 30-V (D-S) Reduced Qgd, Fast Switching WFET
Vishay Siliconix	SI7430DP	114Kb / 7P	N-Channel 150-V (D-S) WFET Rev. A, 24-Jul-06
	SI4390DY	44Kb / 5P	N-Channel Qg, Fast Switching WFET Rev. B, 19-May-03
	SI7840DP	51Kb / 4P	N-Channel 30-V (D-S) Fast Switching MOSFET Rev. C, 25-Feb-02
	SI7840BDP	220Kb / 3P	N-Channel 30-V (D-S) Fast Switching MOSFET 04-Dec-04
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	SI7114DN	534Kb / 12P	N-Channel 30-V (D-S) Fast Switching MOSFET Rev. E, 17-Mar-08
	SI7446BDP	112Kb / 6P	N-Channel 30-V (D-S) Fast Switching MOSFET Rev. E, 14-Sep-09
	SI7326DN-T1-E3	538Kb / 12P	N-Channel 30-V (D-S) Fast Switching MOSFET Rev. C, 29-Dec-08
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