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MT3S36T Fiches technique(PDF) 2 Page - Toshiba Semiconductor

No de pièce MT3S36T
Description  TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

MT3S36T Fiches technique(HTML) 2 Page - Toshiba Semiconductor

  MT3S36T Datasheet HTML 1Page - Toshiba Semiconductor MT3S36T Datasheet HTML 2Page - Toshiba Semiconductor MT3S36T Datasheet HTML 3Page - Toshiba Semiconductor MT3S36T Datasheet HTML 4Page - Toshiba Semiconductor  
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MT3S36T
2
2002-08-19
Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition Frequency
fT
VCE=3V, IC=15mA, f=2GHz
15
19
-
GHz
|S21e|
2(1)
VCE=3V, IC=15mA, f=1GHz
15
17.5
-
dB
Insertion Gain
|S21e|
2(2)
VCE=3V, IC=15mA, f=2GHz
10
12.5
-
dB
NF(1)
VCE=3V, IC=3mA, f=1GHz
-
1.1
-
dB
Noise Figure
NF(2)
VCE=3V, IC=3mA, f=2GHz
-
1.3
1.8
dB
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector Cut-off Current
ICBO
VCB=8V, IE=0
-
-
1
µA
Emitter Cut-off Current
IEBO
VEB=1V, IC=0
-
-
1
µA
DC Current Gain
hFE
VCE=3V, IC=10mA
70
-
140
-
Output Capacitance
Cob
VCB=1V, IE=0, f=1MHz
-
0.55
0.85
pF
Reverse Transistor Capacitance
Cre
VCB=1V, IE=0, f=1MHz (Note 1)
-
0.26
0.5
pF
Note 1:
Cre is measured by 3 terminal method with capacitance bridge.
Caution:
This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.


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