MT3S36T datasheet(2/4 Pages) TOSHIBA

No de pièce	MT3S36T

Description	TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE

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Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

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MT3S36T

2

2002-08-19

Microwave Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Transition Frequency

fT

VCE=3V, IC=15mA, f=2GHz

15

19

-

GHz

|S21e|

2(1)

VCE=3V, IC=15mA, f=1GHz

15

17.5

-

dB

Insertion Gain

|S21e|

2(2)

VCE=3V, IC=15mA, f=2GHz

10

12.5

-

dB

NF(1)

VCE=3V, IC=3mA, f=1GHz

-

1.1

-

dB

Noise Figure

NF(2)

VCE=3V, IC=3mA, f=2GHz

-

1.3

1.8

dB

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector Cut-off Current

ICBO

VCB=8V, IE=0

-

1

µA

Emitter Cut-off Current

IEBO

VEB=1V, IC=0

-

1

µA

DC Current Gain

hFE

VCE=3V, IC=10mA

70

-

140

-

Output Capacitance

Cob

VCB=1V, IE=0, f=1MHz

-

0.55

0.85

pF

Reverse Transistor Capacitance

Cre

VCB=1V, IE=0, f=1MHz (Note 1)

-

0.26

0.5

pF

Note 1:

Cre is measured by 3 terminal method with capacitance bridge.

Caution:

This device is sensitive to electrostatic discharge.

Please make enough tool and equipment earthed when you handle.

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