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MT3S36T Fiches technique(PDF) 1 Page - Toshiba Semiconductor

No de pièce MT3S36T
Description  TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

MT3S36T Fiches technique(HTML) 1 Page - Toshiba Semiconductor

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MT3S36T
1
2002-08-19
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE
MT3S36T
VCO OSCILLETOR STAGE
UHF LOW NOISE AMPLIFIER APPLICATION
FEATURES
· Low Noise Figure :NF=1.3dB (@f=2GHz)
· High Gain:|S21e|
2=12.5dB (@f=2GHz)
Marking
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-Base voltage
VCBO
8
V
Collector-Emitter voltage
VCEO
4.5
V
Emitter-Base voltage
VEBO
1.5

V
Collector-Current
IC
36
mA
Base-Current
IB
18
mA
Collector Power dissipation
PC
100
mW
Junction temperature
Tj
150
°C
Storage temperature Range
Tstg
−55~150
°C
Unit: mm
TESM
JEDEC
JEITA
TOSHIBA
2-1B1A
Weight:0.0022g (typ.)
3
1
2
Q 3


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Numéro de composants électroniques

No de pièceDescriptionHtml ViewFabricant
MT3S38T TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE 1  2  3  4  Toshiba Semiconductor
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2SC5712 TOSHIBA Transistor Silicon NPN Epitaxial Type 1  2  3  4  5  Toshiba Semiconductor

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