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FDS6900AS Fiches technique(PDF) 8 Page - Fairchild Semiconductor

No de pièce FDS6900AS
Description  Dual N-Ch PowerTrench SyncFET
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS6900AS Fiches technique(HTML) 8 Page - Fairchild Semiconductor

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FDS6900AS Rev B (X)
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET.
This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 23
shows the reverse recovery characteristic of the
FDS6900AS.
Figure 23. FDS6900AS SyncFET body
diode reverse recovery characteristic.
For comparison purposes, Figure 24 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6690).
Figure 24. Non-SyncFET (FDS6690) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage.
This will
increase the power in the device.
0.000001
0.00001
0.0001
0.001
0.01
0
5
10
15
20
25
30
VDS, REVERSE VOLTAGE (V)
125
oC
25
oC
100
oC
Figure 25. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature
Time: 10nS/DIV
Time: 10nS/DIV


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