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FDN304PZ Fiches technique(PDF) 3 Page - Fairchild Semiconductor |
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FDN304PZ Fiches technique(HTML) 3 Page - Fairchild Semiconductor |
3 / 5 page FDN304PZ Rev C (W) Typical Characteristics 0 2 4 6 8 10 0 0.5 1 1.5 2 -VDS, DRAIN-SOURCE VOLTAGE (V) -2.0V -2.5V -1.5V VGS = -4.5V -3.0V -6.0V 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10 -ID, DRAIN CURRENT (A) VGS = -2.0V -3.5V -2.5V -4.5V -3.0V -6.0V -10.0V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.8 0.9 1 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE ( oC) ID = -2.4A VGS = -4.5V 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) ID = -1.2 A TA = 125 oC TA = 25 oC Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 -VGS, GATE TO SOURCE VOLTAGE (V) TA = 125 oC 25 oC VDS = - 5V -55 oC 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125 oC 25 oC -55 oC VGS = 0V Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
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