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IRFAE30 Fiches technique(PDF) 1 Page - International Rectifier

No de pièce IRFAE30
Description  REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Download  7 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRFAE30 Fiches technique(HTML) 1 Page - International Rectifier

  IRFAE30 Datasheet HTML 1Page - International Rectifier IRFAE30 Datasheet HTML 2Page - International Rectifier IRFAE30 Datasheet HTML 3Page - International Rectifier IRFAE30 Datasheet HTML 4Page - International Rectifier IRFAE30 Datasheet HTML 5Page - International Rectifier IRFAE30 Datasheet HTML 6Page - International Rectifier IRFAE30 Datasheet HTML 7Page - International Rectifier  
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Absolute Maximum Ratings
Parameter
Units
ID @ VGS =0V, TC = 25°C
Continuous Drain Current
3.1
ID @ VGS = 0V, TC = 100°C
Continuous Drain Current
2.0
IDM
Pulsed Drain Current ➀
12
PD @ TC = 25°C
Max. Power Dissipation
7 5
W
Linear Derating Factor
0.6
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy ➁
100
mJ
IAR
Avalanche Current ➀
3.1
A
EAR
Repetitive Avalanche Energy ➀
7.5
mJ
dv/dt
Peak Diode Recovery dv/dt ➂
2.0
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063 in. (1.6mm) from case for 10s)
Weight
11.5(typical)
g
PD - 90614
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
o C
A
REPETITIVE AVALANCHE AND dv/dt RATED
IRFAE30
HEXFET
TRANSISTORS
THRU-HOLE (TO-204AA/AE)
01/24/01
www.irf.com
1
800V, N-CHANNEL
TO-3
Product Summary
Part Number
BVDSS
RDS(on)
ID
IRFAE30
800V
3.2
3.1Α
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
For footnotes refer to the last page


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