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IRFAE30 Fiches technique(PDF) 2 Page - International Rectifier

No de pièce IRFAE30
Description  REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Download  7 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRFAE30 Fiches technique(HTML) 2 Page - International Rectifier

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IRFAE30
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction to Case
1.67
RthJA
Junction to Ambient
30
Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
3.1
ISM
Pulse Source Current (Body Diode) ➀
——
1 2
VSD
Diode Forward Voltage
1.8
V
Tj = 25°C, IS =3.1A, VGS = 0V ➃
trr
Reverse Recovery Time
800
nS
Tj = 25°C, IF = 3.1A, di/dt ≤ 100A/µs
QRR
Reverse Recovery Charge
3.6
µC
VDD ≤ 50V ➃
t on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ
Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
8 00
V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
0.98
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
3.2
VGS = 10V, ID = 2.0A➃
Resistance
3.7
VGS = 10V, ID =3.1A➃
VGS(th)
Gate Threshold Voltage
2.0
4.0
V
VDS = VGS, ID =250µA
gfs
Forward Transconductance
2.5
S ( )VDS > 15V, IDS = 2.0A ➃
IDSS
Zero Gate Voltage Drain Current
2 5
VDS= 640V,VGS=0V
250
VDS =640V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -20V
Qg
Total Gate Charge
3 0
6 9
VGS=10V, ID=3.1A
Qgs
Gate-to-Source Charge
3.1
7.1
nC
VDS = 400V
Qgd
Gate-to-Drain (‘Miller’) Charge
1 7
4 0
td(on)
Turn-On Delay Time
2 3
VDD =400V, ID =3.1A,
t r
Rise Time
3 2
RG =7.5Ω
td(off)
Turn-Off Delay Time
120
tf
Fall Time
4 4
LS + LD
Total Inductance
6.1
Ciss
Input Capacitance
950
VGS = 0V, VDS = 25V
Coss
Output Capacitance
170
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
8 0
nA
nH
ns
µA
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)


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