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MC14528BF Fiches technique(PDF) 4 Page - ON Semiconductor

No de pièce MC14528BF
Description  Dual Monostable Multivibrator
Download  12 Pages
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

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MC14528B
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4
SWITCHING CHARACTERISTICS (8.) (CL = 50 pF, TA = 25_C)
Characteristic
Symbol
CX
pF
RX
k
VDD
Vdc
Min
Typ (9.)
Max
Unit
Output Rise and Fall Time
tTLH, tTHL = (1.5 ns/pF) CL + 25 ns
tTLH, tTHL = (0.75 ns/pF) CL + 12.5 ns
tTLH, tTHL = (0.55 ns/pF) CL + 9.5 ns
tTLH,
tTHL
5.0
10
15
100
50
40
200
100
80
ns
Turn–Off, Turn–On Delay Time — A or B to Q or Q
tPLH, tPHL = (1.7 ns/pF) CL + 240 ns
tPLH, tPHL = (0.66 ns/pF) CL + 87 ns
tPLH, tPHL = (0.5 ns/pF) CL + 65 ns
tPLH,
tPHL
15
5.0
5.0
10
15
325
120
90
650
240
180
ns
Turn–Off, Turn–On Delay Time — A or B to Q or Q
tPLH, tPHL = (1.7 ns/pF) CL + 620 ns
tPLH, tPHL = (0.66 ns/pF) CL + 257 ns
tPLH, tPHL = (0.5 ns/pF) CL + 185 ns
tPLH,
tPHL
1000
10
5.0
10
15
705
290
210
ns
Input Pulse Width — A or B
tWH
15
5.0
5.0
10
15
150
75
55
70
30
30
ns
tWL
1000
10
5.0
10
15
70
30
30
ns
Output Pulse Width — Q or Q
(For CX < 0.01 µF use graph for
appropriate VDD level.)
tW
15
5.0
5.0
10
15
550
350
300
ns
Output Pulse Width — Q or Q
(For CX > 0.01 µF use formula:
tW = 0.2 RX CX Ln [VDD – VSS]) (6.)
tW
10,000
10
5.0
10
15
15
10
15
30
50
55
45
90
95
µs
Pulse Width Match between Circuits in the same
package
t1 – t2
10,000
10
5.0
10
15
6.0
8.0
8.0
25
35
35
%
Reset Propagation Delay — Reset to Q or Q
tPLH,
tPHL
15
5.0
5.0
10
15
325
90
60
600
225
170
ns
1000
10
5.0
10
15
1000
300
250
ns
Retrigger Time
trr
15
5.0
5.0
10
15
0
0
0
ns
1000
10
5.0
10
15
0
0
0
ns
External Timing Resistance
RX
5.0
1000
k
External Timing Capacitance
CX
No Limits (7.)
µF
6.
RX is in Ohms, CX is in farads, VDD and VSS in volts, PWout in seconds.
7. If CX > 15 µF, Use Discharge Protection Diode DX, per Fig. 9.
8. The formulas given are for the typical characteristics only at 25
_C.
9. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.


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