2SC4501S datasheet(2/5 Pages) HITACHI

No de pièce	2SC4501S

Description	Silicon NPN Epitaxial

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Fabricant	HITACHI [Hitachi Semiconductor]

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2SC4501(L)/(S)

2

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

V

CBO

30

V

Collector to emitter voltage

V

CEO

30

V

Emitter to base voltage

V

EBO

7V

Collector current

I

C

3A

Collector peak current

I

C (peak)

4A

Collector power dissipation

P

C*

1

10

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note:

1. Value at T

C = 25°C.

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

V

(BR)CBO

30

—

V

I

C = 0.1 mA, IE = 0

Collector to emitter breakdown

voltage

V

(BR)CEO

30

—

V

I

C = 1 mA, RBE = _

Emitter to base breakdown

voltage

V

(BR)EBO

7—

—

V

I

E = 0.1 mA, IC = 0

Collector cutoff current

I

CEO

——20

µA

V

CB = 24 V, RBE = _

DC current transfer ratio

h

FE

2000

—

50000

V

CE = 3 V, IC = 1.5 A*

1

Collector to emitter saturation

voltage

V

CE (sat)

—

1.5

V

I

C = 1.5 A, IB = 3 mA*

1

V

CE (sat)

—

2.0

I

C = 3 A, IB = 30 mA*

1

Base to emitter saturation

voltage

V

BE (sat)

—

2.0

V

I

C = 1.5 A, IB = 3 mA*

1

V

BE (sat)

—

3.5

I

C = 3 A, IB = 30 mA*

1

Turn on time

t

on

—

0.4

—

µs

I

C = 1.5 A,

Turn off time

t

off

—

1.2

—

µs

I

B1 = –IB2 = 3 mA,

Storage time

t

stg

—

0.8

—

µs

V

CC = 30 V

Note:

1. Pulse test.

Numéro de pièce similaire - 2SC4501S

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