IKW50N60T datasheet(6/13 Pages) INFINEON

No de pièce	IKW50N60T

Description	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

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Fabricant	INFINEON [Infineon Technologies AG]

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IKW50N60T

TrenchStop Series

q

Power Semiconductors

6

Rev. 2.1 Dec-04

0A

20A

40A

60A

80A

10ns

100ns

t

r

t

d(on)

t

f

t

d(off)

0Ω

5Ω

10Ω

15Ω

20Ω

25Ω

10ns

100ns

t

r

t

d(on)

t

f

t

d(off)

IC, COLLECTOR CURRENT

RG, GATE RESISTOR

Figure 9. Typical switching times as a

function of collector current

(inductive load, TJ=175°C,

VCE = 400V, VGE = 0/15V, RG = 7Ω,

Dynamic test circuit in Figure E)

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, TJ = 175°C,

VCE= 400V, VGE = 0/15V, IC = 50A,

Dynamic test circuit in Figure E)

25°C

50°C

75°C

100°C 125°C 150°C

10ns

100ns

t

r

t

d(on)

t

f

t

d(off)

-50°C

0°C

50°C

100°C

150°C

0V

1V

2V

3V

4V

5V

6V

7V

min.

typ.

max.

TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE = 400V,

VGE = 0/15V, IC = 50A, RG=7Ω,

Dynamic test circuit in Figure E)

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(IC = 0.8mA)

Numéro de pièce similaire - IKW50N60T

Fabricant	No de pièce	Fiches technique	Description
Infineon Technologies A...	IKW50N60T	417Kb / 13P	Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology Rev. 2.4 Sep 08
	IKW50N60T	598Kb / 13P	IGBT in TRENCHSTOP??and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Rev. 2.6 20.09.2013
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	IKW50N60T	417Kb / 13P	Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology Rev. 2.4 Sep 08
	IKW50N60T	598Kb / 13P	IGBT in TRENCHSTOP??and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Rev. 2.6 20.09.2013

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