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THS4513 Fiches technique(PDF) 2 Page - Texas Instruments |
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THS4513 Fiches technique(HTML) 2 Page - Texas Instruments |
2 / 34 page www.ti.com ABSOLUTE MAXIMUM RATINGS DISSIPATION RATINGS TABLE PER PACKAGE THS4513 SLOS472 – AUGUST 2005 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. PACKAGING/ORDERING INFORMATION PACKAGED DEVICES TEMPERATURE QUAD QFN(1)(2) SYMBOL (RGT-16) THS4513RGTT –40 °C to 85°C – THS4513RGTR (1) This package is available taped and reeled. The R suffix standard quantity is 3000. The T suffix standard quantity is 250. (2) The exposed thermal pad is electrically isolated from all other pins. over operating free-air temperature range (unless otherwise noted) UNIT VS– to VS+ Supply voltage 6 V VI Input voltage ±VS VID Differential input voltage 4 V IO Output current(1) 200 mA Continuous power dissipation See Dissipation Rating Table TJ Maximum junction temperature 150°C TA Operating free-air temperature range –40 °C to 85°C Tstg Storage temperature range –65 °C to 150°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 300 °C HBM 2000 ESD ratings CDM 1500 MM 100 (1) The THS4513 incorporates a (QFN) exposed thermal pad on the underside of the chip. This acts as a heatsink and must be connected to a thermally dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature which could permanently damage the device. See TI technical brief SLMA002 and SLMA004 for more information about utilizing the QFN thermally enhanced package. POWER RATING PACKAGE θ JC θ JA TA≤ 25°C TA = 85°C RGT (16) 2.4 °C/W 39.5 °C/W 2.3 W 225 mW 2 |
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