KMM53632000BKG datasheet(5/18 Pages) SAMSUNG

No de pièce	KMM53632000BKG

Description	32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V

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Fabricant	SAMSUNG [Samsung semiconductor]

Site Internet	http://www.samsung.com/Products/Semiconductor

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DRAM MODULE

KMM53632000BK/BKG

NOTES

An initial pause of 200us is required after power-up followed

by any 8 RAS-only or CAS-before-RAS refresh cycles before

proper device operation is achieved.

Input voltage levels are Vih/Vil. VIH(min) and VIL(max) are ref-

erence levels for measuring timing of input signals. Transi-

tion times are measured between VIH(min) and VIL(max) and

are assumed to be 5ns for all inputs.

Measured with a load equivalent to 2 TTL loads and 100pF.

Operation within the

tRCD(max) limit insures that tRAC(max)

can be met.

tRCD(max) is specified as a reference point only.

If

tRCD is greater than the specified tRCD(max) limit, then

access time is controlled exclusively by

tCAC.

Assumes that

tRCD

≥tRCD(max).

This parameter defines the time at which the output achieves

the open circuit condition and is not referenced to VOH or

VOL.

tWCS is non-restrictive operating parameter. It is included in

the

data

sheet

as

electrical

characteristics

only.

If

tWCS

≥tWCS(min), the cycle is an early write cycle and the

data out pin will remain high impedance for the duration of

the cycle.

Either

tRCH or tRRH must be satisfied for a read cycle.

These parameters are referenced to the CAS leading edge in

early write cycles.

Operation within the

tRAD(max) limit insures that tRAC(max)

can be met.

tRAD(max) is specified as reference point only. If

tRAD is greater than the specified tRAD(max) limit, then

access time is controlled by

tAA.

1.

2.

3.

4.

5.

6.

7.

8.

9.

10.

Test condition : Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V, output loading CL=100pF

Parameter

Symbol

-5

-6

Unit

Note

Min

Max

Min

Max

Fast page mode cycle time

tPC

35

40

ns

CAS precharge time(Fast page cycle)

tCP

10

ns

RAS pulse width(Fast page cycle)

tRASP

50

200K

60

200K

ns

W to RAS precharge time(C-B-R refresh)

tWRP

10

ns

W to RAS hold time(C-B-R refresh)

tWRH

10

ns

AC CHARACTERISTICS (0

°C≤TA≤70°C, VCC=5.0V±10%. See notes 1,2.)

Numéro de pièce similaire - KMM53632000BKG

Fabricant	No de pièce	Fiches technique	Description
Samsung semiconductor	KMM53632000CK	428Kb / 20P	32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
Samsung semiconductor	KMM53632000CKG	428Kb / 20P	32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V

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Description similaire - KMM53632000BKG

Fabricant	No de pièce	Fiches technique	Description
Samsung semiconductor	KMM53632000CK	428Kb / 20P	32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
	KMM53632004BK	434Kb / 19P	32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V
	KMM53632004CK	475Kb / 21P	32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V
	KMM53616000BK	371Kb / 18P	16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
	KMM53616004CK	453Kb / 21P	16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
	KMM53616000CK	410Kb / 20P	16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
	KMM53616004BK	415Kb / 19P	16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
	KMM53232004CK	459Kb / 21P	32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
	KMM53232004BK	420Kb / 19P	32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
	KMM53232000CK	412Kb / 20P	32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V

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