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KMM5322204C2W Fiches technique(PDF) 5 Page - Samsung semiconductor

No de pièce KMM5322204C2W
Description  2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V
Download  17 Pages
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Fabricant  SAMSUNG [Samsung semiconductor]
Site Internet  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KMM5322204C2W Fiches technique(HTML) 5 Page - Samsung semiconductor

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DRAM MODULE
KMM5322204C2W/C2WG
Rev. 0.0 (Nov. 1997)
- 5 -
ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In I CC1 and ICC3, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one EDO mode cycle,
tHPC.
* NOTE :
ABSOLUTE MAXIMUM RATINGS *
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for in tended
periods may affect device reliability.
Item
Symbol
Rating
Unit
Voltage on any pin relative to V SS
Voltage on VCC supply relative to V SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
VIN, VOUT
VCC
Tstg
Pd
IOS
-1 to +7.0
-1 to +7.0
-55 to +150
4
50
V
V
°C
W
mA
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to VSS, TA = 0 to 70
°C)
*1 : VCC+2.0V/20ns, Pulse width is measured at VCC.
*2 : -2.0V/20ns, Pulse width is measured at VSS.
Item
Symbol
Min
Typ
Max
Unit
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
VCC
VSS
VIH
VIL
4.5
0
2.4
-1.0*2
5.0
0
-
-
5.5
0
VCC+1*1
0.8
V
V
V
V
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted)
ICC1
ICC2
ICC3
ICC4
ICC5
ICC6
II(L)
IO(L)
VOH
VOL
Symbol
Speed
KMM5322204C2W/C2WG
Unit
Min
Max
ICC1
-5
-6
-
-
304
284
mA
mA
ICC2
Don
′t care
-
8
mA
ICC3
-5
-6
-
-
304
284
mA
mA
ICC4
-5
-6
-
-
244
224
mA
mA
ICC5
Don
′t care
-
4
mA
ICC6
-5
-6
-
-
304
284
mA
mA
II(L)
IO(L)
Don
′t care
-20
-10
20
10
uA
uA
VOH
VOL
Don
′t care
2.4
-
-
0.4
V
V
: Operating Current * ( RAS, CAS, Address cycling @
tRC=min)
: Standby Current ( RAS=CAS=W=VIH)
: RAS Only Refresh Current * ( CAS=VIH, RAS cycling @
tRC=min)
: EDO Mode Current * ( RAS=VIL, CAS cycling :
tHPC=min)
: Standby Current ( RAS=CAS=W=Vcc-0.2V)
: CAS-Before-RAS Refresh Current * ( RAS and CAS cycling @
tRC=min)
: Input Leakage Current (Any input 0
≤VIN≤Vcc+0.5V, all other pins not under test=0 V)
: Output Leakage Current(Data Out is disabled, 0V
≤VOUT≤Vcc)
: Output High Voltage Level (I OH = -5mA)
: Output Low Voltage Level (I OL = 4.2mA)


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