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STD9N10 Fiches technique(PDF) 4 Page - STMicroelectronics |
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STD9N10 Fiches technique(HTML) 4 Page - STMicroelectronics |
4 / 12 page STD9N10/STD9N10-1 4/12 Table 11. Source Drain Diode Note: 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Figure 3. Safe Operating Area Figure 4. Thermal Impedance Figure 5. Derating Curve Figure 6. Output Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 9 A ISDM (1) Source-drain Current (pulsed) 36 A VSD (2) Forward On Voltage ISD = 9 A; VGS = 0 1.5 V trr Reverse Recovery Time ISD = 9 A; di/dt = 100 A/µs VDD = 20 V; Tj = 150 °C (see test circuit, Figure 24) 80 ns Qrr Reverse RecoveryCharge 0.2 µC IRRAM Reverse RecoveryCurrent 5 A |
Numéro de pièce similaire - STD9N10 |
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Description similaire - STD9N10 |
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