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2SK3932-01MR Fiches technique(PDF) 2 Page - Fuji Electric

No de pièce 2SK3932-01MR
Description  N-CHANNEL SILICON POWER MOSFET
Download  4 Pages
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Fabricant  FUJI [Fuji Electric]
Site Internet  http://www.fujielectric.co.jp/eng/fdt/scd
Logo FUJI - Fuji Electric

2SK3932-01MR Fiches technique(HTML) 2 Page - Fuji Electric

  2SK3932-01MR Datasheet HTML 1Page - Fuji Electric 2SK3932-01MR Datasheet HTML 2Page - Fuji Electric 2SK3932-01MR Datasheet HTML 3Page - Fuji Electric 2SK3932-01MR Datasheet HTML 4Page - Fuji Electric  
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Characteristics
2SK3932-01MR
FUJI POWER MOSFET
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
Allowable Power Dissipation
PD=f(Tc)
Tc [
°C]
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
30
7.0V
20V
10V
8.0V
6.5V
VGS=6.0V
VDS [V]
Typical Output Characteristics
ID=f(VDS):80
µs pulse test,Tch=25°C
01
23
4567
89
10
0.1
1
10
100
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80
µs pulse test,VDS=25V,Tch=25°C
0.1
1
10
100
0.1
1
10
100
ID [A]
Typical Transconductance
gfs=f(ID):80
µs pulse test,VDS=25V,Tch=25°C
0
5
10
15
20
25
30
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
µs pulse test,Tch=25°C
10V
20V
8.0V
7.0V
6.5V
VGS=6.0V
-50
-25
0
25
50
75
100
125
150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Tch [
°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=5.5A,VGS=10V


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