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2SK3931-01 Fiches technique(PDF) 1 Page - Fuji Electric

No de pièce 2SK3931-01
Description  N-CHANNEL SILICON POWER MOSFET
Download  4 Pages
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Fabricant  FUJI [Fuji Electric]
Site Internet  http://www.fujielectric.co.jp/eng/fdt/scd
Logo FUJI - Fuji Electric

2SK3931-01 Fiches technique(HTML) 1 Page - Fuji Electric

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1
TO-220AB
Item
Symbol
Ratings
Unit
Remarks
Drain-source voltage
VDS
500
VDSX
500
Continuous Drain Current
ID
11
Pulsed Drain Current
ID(puls]
±44
Gate-Source Voltage
VGS
±30
Maximum Avalanche current
IAR
11
Non-Repetitive
EAS
453.9
Maximum Avalanche Energy
Repetitive
EAR
16.5
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
dVDS/dt
20
Peak Diode Recovery dV/dt
dV/dt
5
Max. Power Dissipation
PD
165
2.02
Operating and Storage
Tch
+150
Temperature range
Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3931-01
FUJI POWER MOSFET
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero Gate Voltage Drain Current
IDSS
VDS=500V VGS=0V
VDS=400V VGS=0V
VGS=±30V
ID=5.5A
VGS=10V
ID=5.5A
VDS=25V
VCC=300V ID=5.5A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
V
µA
µA
nA
S
pF
nC
V
ns
µC
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
0.758
62
°C/W
°C/W
Symbol
BVDSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Item
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250µA
VGS=0V
ID= 250µA
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MH
VCC=250V
ID=11A
VGS=10V
IF=11A VGS=0V Tch=25°C
IF=11A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
V
A
A
V
A
mJ
mJ
kV/µs
kV/µs
W
°C
°C
500
3.0
5.0
25
250
10
100
0.57
0.70
4.5
9.0
950
1425
130
195
6.0
9.0
16
24
6.0
9.0
33
50
5.5
8.3
25
38
10
15
8.0
12
1.10
1.50
650
5.5
-55 to +150
Outline Drawings (mm)
www.fujielectric.co.jp/fdt/scd
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
200406
VGS=-30V
Note *1
Note *2
Note *3
VDS 500V
Note *4
Tc=25°C
Ta=25°C
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Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Gate(G)
Source(S)
Drain(D)
Note *1:Tch 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=4.4A,L=43mH,
VCC=50V,RG=50
EAS limited by maximum channel temperature
and avalanch current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Theemal impedance’
graph
Note *4:IF -ID, -di/dt=50A/
µs,VCC BVDSS,Tch 150°C
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