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2SK3779-01R Fiches technique(PDF) 1 Page - Fuji Electric

No de pièce 2SK3779-01R
Description  N-CHANNEL SILICON POWER MOSFET
Download  4 Pages
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Fabricant  FUJI [Fuji Electric]
Site Internet  http://www.fujielectric.co.jp/eng/fdt/scd
Logo FUJI - Fuji Electric

2SK3779-01R Fiches technique(HTML) 1 Page - Fuji Electric

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1
Item
Symbol
Ratings
Unit
Remarks
Drain-source voltage
VDS
250
VDSX
250
Continuous Drain Current
ID
59
Pulsed Drain Current
ID(puls]
±236
Gate-Source Voltage
VGS
±30
Maximum Avalanche current
IAR
59
Non-Repetitive
EAS
1115.2
Maximum Avalanche Energy
Repetitive
EAR
41
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
dVDS/dt
20
Peak Diode Recovery dV/dt
dV/dt
5
Max. Power Dissipation
PD
210
3.13
Operating and Storage
Tch
+150
Temperature range
Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3779-01R
FUJI POWER MOSFET
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero Gate Voltage Drain Current
IDSS
VDS=250V VGS=0V
VDS=200V VGS=0V
VGS=±30V
ID=29.5A
VGS=10V
ID=29.5A
VDS=25V
VCC=72V ID=29.5A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
V
µA
nA
m
S
pF
nC
V
ns
µC
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
0.595
40.0
°C/W
°C/W
Symbol
BVDSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Item
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250µA
VGS=0V
ID= 250µA
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MHz
VCC=150V
ID=32A
VGS=10V
IF=59A VGS=0V Tch=25°C
IF=59A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
V
A
A
V
A
mJ
mJ
kV/µs
kV/µs
W
°C
°C
250
3.0
5.0
25
250
100
43
53
12
24
3800
5400
530
795
35
52.5
40
60
62
93
70
105
20
30
80
120
30
45
25
38
1.20
1.50
370
4.5
-55 to +150
Outline Drawings (mm)
www.fujielectric.co.jp/fdt/scd
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
200406
VGS=-30V
Note *1
Note *2
Note *3
VDS 250V
Note *4
Tc=25°C
Ta=25°C
=
<
Note *1:Tch 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=24A,L=3.25mH,
VCC=48V,RG=50
EAS limited by maximum channel temperature
and avalanch current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Theemal impedance’
graph
Note *4:IF -ID, -di/dt=50A/µs,VCC BVDSS, Tch 150°C
=
<
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Gate(G)
Source(S)
Drain(D)
=
<
=
<
=
<


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