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W98M9640 Fiches technique(PDF) 5 Page - List of Unclassifed Manufacturers

No de pièce W98M9640
Description  Semiconductor Discrete Device, P-Channel Power MOS Field Effect Transistor
Download  13 Pages
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Fabricant  ETC1 [List of Unclassifed Manufacturers]
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W98M9640 Fiches technique(HTML) 5 Page - List of Unclassifed Manufacturers

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Microcircuit, Linear, Dual MOSFET Drivers,
Monolithic Silicon
SIZE
A
CAGE CODE
09WF0
W98M9640
DATE:
98-09-23
REVISION LEVEL
A
SHEET
5
TABLE II. Electrical performance characteristics- Continued.
Test
Symbol
Conditions
TJ = +25°C
Group A
Limits
Units
unless otherwise specified
subgroups
Min
Typ
Max
Source-Drain Ratings :
Continuous source
current (body diode)
IS
MOSFET symbol showing the
integral reverse p-n junction diode
5B/
Room
-11
A
Pulsed source current
(body diode)
ISM
-44
Diode forward voltage
VSD
IS = -11 A, VGS = 0 V
4/
-5.0
V
Reverse recovery time
trr
IF = -11 A, di/dt = 100 A/µs
4/
250
300
ns
Reverse recovery charge
Qrr
2.9
3.6
µC
Forward turn-on time
ton
turn-on is dominated by LS + LD
intrinsic turn-on is neglible
1/ Repetitive rating; pulse width limited by max. Junction temperature (see Figure 2.11)
2/ VDD = -50 V, starting TJ = +25°C, L = 8.7 mH, RG = 25
, IAS = -11 A (see Figure 2.12).
3/ ISD -11 A, di/dt 150 A/µs, VDD V(BR)DSS, TJ +150°C.
4/ Pulse width
300 µs; duty cycle 2%.
Insert A.
Insert B.


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