MAC223A6 datasheet(3/13 Pages) WEEN

No de pièce	MAC223A6

Description	4Q Triac

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WeEn Semiconductors

MAC223A6

4Q Triac

MAC223A6

All information provided in this document is subject to legal disclaimers.

Product data sheet

15 September 2018

3 / 13

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDRM

repetitive peak off-state

voltage

-

400

V

IT(RMS)

RMS on-state current

full sine wave; Tmb ≤ 91 °C; Fig. 1; Fig. 2;

Fig. 3

-

25

A

full sine wave; Tj(init) = 25 °C; tp = 20 ms;

Fig. 4; Fig. 5

-

190

A

ITSM

non-repetitive peak on-

state current

full sine wave; Tj(init) = 25 °C; tp = 16.7 ms

-

230

A

I2t

I2t for fusing

tp = 10 ms; SIN

-

180

A²s

-

50

A/µs

IG = 200 mA; T2+ G+

-

50

A/µs

IG = 200 mA; T2- G-

-

50

A/µs

dIT/dt

rate of rise of on-state

current

IG = 200 mA; T2- G+

-

10

A/µs

IGM

peak gate current

-

2

A

PGM

peak gate power

-

5

W

PG(AV)

average gate power

over any 20 ms period

-

0.5

W

Tstg

storage temperature

-40

150

°C

Tj

junction temperature

-

125

°C

003aad994

0

20

40

60

80

10-2

10-1

1

10

surge duration (s)

IT(RMS)

(A)

f = 50 Hz; Tmb = 91 °C

Fig. 1. RMS on-state current as a function of surge

duration; maximum values

003aad995

0

10

20

30

-50

0

50

100

150

Tmb(°C)

IT(RMS)

(A)

Fig. 2. RMS on-state current as a function of mounting

base temperature; maximum values

IG = 200 mA; T2+ G-

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