SI7921DN-T1-E3 datasheet(4/5 Pages) VISHAY

No de pièce	SI7921DN-T1-E3

Description	Dual P-Channel 30-V (D-S) MOSFET

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Document Number: 72341

S-51210–Rev. B, 27-Jun-05

Vishay Siliconix

Si7921DN

New Product

TYPICAL CHARACTERISTICS

TA = 25°C, unless otherwise noted

Threshold Voltage

–0.4

–0.2

0.0

0.2

0.4

0.6

–50

–25

0

25

50

75

100

125

150

ID = 250 µA

TJ – Temperature (˚C)

Single Pulse Power, Juncion-To-Ambient

0

20

30

10

15

Time (sec)

25

100

600

0.1

0.001

1

10

0.01

5

Safe Operating Area, Junction-To-Ambient

VDS – Drain-to-Source Voltage (V)

100

1

0.1

1

10

100

0.01

10

TA = 25˚C

Single Pulse

0.1

ID(on)

Limited

BVDSS Limited

P(t) = 10

P(t) = 1

P(t) = 0.1

dc

P(t) = 0.01

P(t) = 0.001

P(t) = 0.0001

rDS(on) Limited

IDM Limited

Normalized Thermal Transient Impedance, Junction-to-Ambient

10–3

10–2

1

10

600

10–1

10–4

100

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Square Wave Pulse Duration (sec)

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 75˚C/W

3. TJM – TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

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Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI4953DY	43Kb / 4P	Dual P-Channel 30-V(D-S) MOSFET Rev. E, 18-Aug-03
	SIA931DJ	277Kb / 9P	Dual P-Channel 30-V (D-S) MOSFET Rev. A, 13-May-13
	SI3993DV	204Kb / 10P	Dual P-Channel 30-V (D-S) MOSFET Rev. C, 02-Nov-09
	SI7997DP	482Kb / 13P	Dual P-Channel 30 V (D-S) MOSFET Rev. A, 09-Aug-10
Anachip Corp	AF4935	149Kb / 3P	Dual P-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4927DY	271Kb / 3P	Dual P-Channel 30-V (D-S) MOSFET Rev. B, 02-Jan-06
Vishay Siliconix	SI7941DP	274Kb / 3P	Dual P-Channel 30-V (D-S) MOSFET 31-May-04
Guangdong Kexin Industr...	KI4923DY	51Kb / 2P	Dual P-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI7945DP	207Kb / 4P	Dual P-Channel 30-V (D-S) MOSFET Rev. B, 27-Feb-06
Guangdong Kexin Industr...	KI4953DY	50Kb / 2P	Dual P-Channel 30-V(D-S) MOSFET

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