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KMM372F400CS Fiches technique(PDF) 3 Page - Samsung semiconductor |
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KMM372F400CS Fiches technique(HTML) 3 Page - Samsung semiconductor |
3 / 20 page DRAM MODULE KMM372F410CK/CS KMM372F400CK/CS ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In ICC1 and ICC3, address can be changed maximum once while RAS=VIL. In ICC4, address can be changed maximum once within one hyper page mode cycle, tHPC. * NOTE : DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted) ICC1* ICC2 ICC3* ICC4* ICC5 ICC6* II(L) IO(L) VOH VOL Symbol Speed KMM372F400CK/CS KMM372F410CK/CS Unit Min Max Min Max ICC1 -5 -6 - - 1620 1440 - - 1980 1800 mA mA ICC2 Don ′t care - 100 - 100 mA ICC3 -5 -6 - - 1620 1440 - - 1980 1800 mA mA ICC4 -5 -6 - - 1440 1260 - - 1620 1440 mA mA ICC5 Don ′t care - 30 - 30 mA ICC6 -5 -6 - - 1620 1440 - - 1980 1800 mA mA II(L) IO(L) Don ′t care -45 -5 45 5 -45 -5 45 5 uA uA VOH VOL Don ′t care 2.4 - - 0.4 2.4 - - 0.4 V V : Operating Current * (RAS, CAS, Address cycling @ tRC=min) : Standby Current (RAS=CAS=W=VIH) : RAS Only Refresh Current * (CAS=VIH, RAS cycling @ tRC=min) : EDO Mode Current * (RAS=VIL, CAS cycling : tHPC=min) : Standby Current (RAS=CAS=W=Vcc-0.2V) : CAS-Before-RAS Refresh Current * (RAS and CAS cycling @ tRC=min) : Input Leakage Current (Any input 0 ≤VIN≤Vcc+0.3V, all other pins not under test=0 V) : Output Leakage Current(Data Out is disabled, 0V ≤VOUT≤Vcc) : Output High Voltage Level (IOH = -2mA) : Output Low Voltage Level (IOL = 2mA) RECOMMENDED OPERATING CONDITIONS (Voltage referenced to VSS, TA = 0 to 70 °C) *1 : VCC+1.3V/15ns, Pulse width is measured at VCC. *2 : -1.3V/15ns, Pulse width is measured at VSS. Item Symbol Min Typ Max Unit Supply Voltage Ground Input High Voltage Input Low Voltage VCC VSS VIH VIL 3.0 0 2.0 -0.3*2 3.3 0 - - 3.6 0 VCC+0.3*1 0.8 V V V V ABSOLUTE MAXIMUM RATINGS * * Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended periods may affect device reliability. Item Symbol Rating Unit Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current VIN, VOUT VCC Tstg PD IOS -0.5 to +4.6 -0.5 to +4.6 -55 to +125 18 50 V V °C W mA |
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