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IRF630MFP Fiches technique(PDF) 2 Page - STMicroelectronics |
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IRF630MFP Fiches technique(HTML) 2 Page - STMicroelectronics |
2 / 9 page IRF630M / FP 2/9 THERMAL DATA ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ON (1) DYNAMIC TO-220 TO-220FP Rthj-case Thermal Resistance Junction-case Max 1.67 4.17 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 200 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1µA VDS = Max Rating, TC = 125 °C 50 µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 23 4 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 4.5 A 0.35 0.40 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS > ID(on) x RDS(on)max, ID = 4.5 A 34 S Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 540 700 pF Coss Output Capacitance 90 120 pF Crss Reverse Transfer Capacitance 35 50 pF |
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Description similaire - IRF630MFP |
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