BC847CLT1G datasheet(4/6 Pages) ONSEMI

No de pièce	BC847CLT1G

Description	General Purpose Transistors(NPN Silicon)

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BC846ALT1 Series

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4

BC846

Figure 7. DC Current Gain

IC, COLLECTOR CURRENT (mA)

Figure 8. “On” Voltage

IC, COLLECTOR CURRENT (mA)

0.8

1.0

0.6

0.2

0.4

1.0

2.0

0.1

1.0

10

100

0.2

0.5

0.2

1.0

10

200

TA = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 5.0 V

Figure 9. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 10. Base−Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

−1.0

1.2

1.6

2.0

0.02

1.0

10

0

20

0.1

0.4

0.8

0.2

2.0

10

200

1.0

TA = 25°C

200 mA

50 mA

IC =

10 mA

VCE = 5 V

TA = 25°C

0

0.5

2.0

5.0

20

50

100

0.05

0.2

0.5

2.0

5.0

100 mA

20 mA

−1.4

−1.8

−2.2

−2.6

−3.0

0.5

5.0

20

50

100

−55°C to 125°C

qVB for VBE

Figure 11. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

40

Figure 12. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mA)

0.1 0.2

1.0

50

2.0

10

100

200

500

50

20

10

6.0

4.0

1.0

10

50 100

5.0

VCE = 5 V

TA = 25°C

0.5

5.0

20

TA = 25°C

Cob

Cib

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