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KBP206G Datasheet(Fiches technique) 1 Page - GeneSiC Semiconductor, Inc.

Numéro de pièce KBP206G
Description  Single Phase Glass Passivated Silicon Bridge Rectifier
Télécharger  3 Pages
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Fabricant  GENESIC [GeneSiC Semiconductor, Inc.]
Site Internet  http://www.genesicsemi.com/
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KBP206G Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc.

   
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VRRM = 600 V - 1000 V
IO = 2 A
Features
• Ideal for printed circuit board
• High temperature soldering guaranteed 265°C/ 10 seconds
KBP Package
• High case dielectric strength
• Not ESD Sensitive
Mechanical Data
Case: Reliable low cost construction
Mounting position: Any
Weight: 0.065 oz, 2.2 grams
Parameter
Symbol
Unit
Repetitive peak reverse voltage
VRRM
V
RMS reverse voltage
VRMS
V
DC blocking voltage
VDC
V
Operating temperature
Tj
°C
Storage temperature
Tstg
°C
Parameter
Symbol
Unit
Maximum average forward
rectified current
IO
A
Peak forward surge current
IFSM
A
Maximum instantaneous
forward voltage per leg
Thermal characteristics
Thermal resistance
RΘJL
°C/W
V
Conditions
KBP206G
KBP208G
• Plastic material has Underwriters Laboratory
Flammability Classification 94V-0
• Types from 600 V to 1000 V V
RRM
Terminals: Plated leads, solderable per MIL-STD-202,
Method 208
Maximum ratings at Ta = 25 °C (ambient temperature), unless otherwise specified
600
1000
700
1000
800
Conditions
KBP210G
800
560
420
-55 to 150
600
-55 to 150
-55 to 150
-55 to 150
500
500
2
500
10
KBP210G
1.1
10
-55 to 150
-55 to 150
KBP206G
KBP208G
1.1
1.1
2
60
60
60
Electrical characteristics at Ta = 25 °C, unless otherwise specified
Ta = 25 °C
IF = 2 A
Single phase, half sine wave, 60 Hz, resistive or inductive load
For capacitive load derate current by 20%
Ta = 50 °C
2
10
KBP206G thru KBP210G
• Built-in printed circuit board stand-offs
Single Phase Glass Passivated
Silicon Bridge Rectifier
25
25
25
Maximum reverse current at
rated DC blocking voltage per
leg
IR
VF
Ta = 100 °C
single sine-wave
μA
1
Oct. 2018
http://www.diodemodule.com/silicon_products/bridge_rectifiers/kbp206g.pdf


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