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IRF1010EZL Datasheet(Fiches technique) 2 Page - International Rectifier

Numéro de pièce IRF1010EZL
Description  AUTOMOTIVE MOSFET
Télécharger  12 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF1010EZL Datasheet(HTML) 2 Page - International Rectifier

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IRF1010EZ/S/LPbF
2
www.irf.com
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C, L = 0.077mH,
RG = 25Ω, IAS = 51A, VGS =10V. Part not
recommended for use above this value.
ƒ I
SD ≤ 51A, di/dt ≤ 260A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
„ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
† Limited by T
Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
‡ This value determined from sample failure population. 100%
tested to this value in production.
ˆ This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
S
D
G
S
D
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
60
–––
–––
V
∆ΒV
DSS/∆TJ
Breakdown Voltage Temp. Coefficient –––
0.058
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance –––
6.8
8.5
m
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
200
–––
–––
S
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
200
nA
Gate-to-Source Reverse Leakage
–––
–––
-200
Qg
Total Gate Charge
–––
58
86
nC
Qgs
Gate-to-Source Charge
–––
19
28
Qgd
Gate-to-Drain ("Miller") Charge
–––
21
32
td(on)
Turn-On Delay Time
–––
19
–––
ns
tr
Rise Time
–––
90
–––
td(off)
Turn-Off Delay Time
–––
38
–––
tf
Fall Time
–––
54
–––
LD
Internal Drain Inductance
–––
4.5
–––
nH
Between lead,
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
2810
–––
pF
Coss
Output Capacitance
–––
420
–––
Crss
Reverse Transfer Capacitance
–––
200
–––
Coss
Output Capacitance
–––
1440
–––
Coss
Output Capacitance
–––
320
–––
Coss eff.
Effective Output Capacitance
–––
510
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
84
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
340
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
41
62
ns
Qrr
Reverse Recovery Charge
–––
54
81
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 51A
f
VDS = VGS, ID = 250µA
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
RG = 7.95Ω
ID = 51A
VDS = 25V, ID = 51A
VDD = 30V
ID = 51A
VGS = 20V
VGS = -20V
TJ = 25°C, IF = 51A, VDD = 30V
di/dt = 100A/µs
f
TJ = 25°C, IS = 51A, VGS = 0V f
showing the
integral reverse
p-n junction diode.
MOSFET symbol
VGS = 0V
VDS = 25V
VGS = 0V, VDS = 48V, ƒ = 1.0MHz
Conditions
VGS = 0V, VDS = 0V to 48V
VDS = 48V
VGS = 10V
f
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 10V
f


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