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IRF1010EZ Datasheet(Fiches technique) 1 Page - International Rectifier

Numéro de pièce IRF1010EZ
Description  AUTOMOTIVE MOSFET
Télécharger  12 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF1010EZ Datasheet(HTML) 1 Page - International Rectifier

  IRF1010EZ Datasheet HTML 1Page - International Rectifier IRF1010EZ Datenblatt HTML 2Page - International Rectifier IRF1010EZ Datenblatt HTML 3Page - International Rectifier IRF1010EZ Datenblatt HTML 4Page - International Rectifier IRF1010EZ Datenblatt HTML 5Page - International Rectifier IRF1010EZ Datenblatt HTML 6Page - International Rectifier IRF1010EZ Datenblatt HTML 7Page - International Rectifier IRF1010EZ Datenblatt HTML 8Page - International Rectifier IRF1010EZ Datenblatt HTML 9Page - International Rectifier Next Button
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06/29/04
www.irf.com
1
HEXFET® is a registered trademark of International Rectifier.
IRF1010EZPbF
IRF1010EZSPbF
IRF1010EZLPbF
HEXFET® Power MOSFET
S
D
G
VDSS = 60V
RDS(on) = 8.5mΩ
ID = 75A
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
AUTOMOTIVE MOSFET
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operat-
ing temperature, fast switching speed and im-
proved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applica-
tions.
D2Pak
IRF1010EZS
TO-220AB
IRF1010EZ
TO-262
IRF1010EZL
Absolute Maximum Ratings
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (See Fig. 9)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
c
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
EAS (tested)
Single Pulse Avalanche Energy Tested Value
i
IAR
Avalanche Current
c
A
EAR
Repetitive Avalanche Energy
h
mJ
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.11
°C/W
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
RθJA
Junction-to-Ambient
–––
62
RθJA
Junction-to-Ambient (PCB Mount, steady state)
j
–––
40
Max.
84
60
340
75
10 lbf•in (1.1N•m)
140
0.90
± 20
99
180
See Fig.12a,12b,15,16
300 (1.6mm from case )
-55 to + 175
PD - 95483
Lead-Free


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