Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

IRF1010EZLPBF Fiches technique(PDF) 2 Page - International Rectifier

No de pièce IRF1010EZLPBF
Description  AUTOMOTIVE MOSFET
Download  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF1010EZLPBF Fiches technique(HTML) 2 Page - International Rectifier

  IRF1010EZLPBF Datasheet HTML 1Page - International Rectifier IRF1010EZLPBF Datasheet HTML 2Page - International Rectifier IRF1010EZLPBF Datasheet HTML 3Page - International Rectifier IRF1010EZLPBF Datasheet HTML 4Page - International Rectifier IRF1010EZLPBF Datasheet HTML 5Page - International Rectifier IRF1010EZLPBF Datasheet HTML 6Page - International Rectifier IRF1010EZLPBF Datasheet HTML 7Page - International Rectifier IRF1010EZLPBF Datasheet HTML 8Page - International Rectifier IRF1010EZLPBF Datasheet HTML 9Page - International Rectifier Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 12 page
background image
IRF1010EZ/S/LPbF
2
www.irf.com
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C, L = 0.077mH,
RG = 25Ω, IAS = 51A, VGS =10V. Part not
recommended for use above this value.
ƒ I
SD ≤ 51A, di/dt ≤ 260A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
„ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
† Limited by T
Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
‡ This value determined from sample failure population. 100%
tested to this value in production.
ˆ This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
S
D
G
S
D
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
60
–––
–––
V
∆ΒV
DSS/∆TJ
Breakdown Voltage Temp. Coefficient –––
0.058
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance –––
6.8
8.5
m
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
200
–––
–––
S
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
200
nA
Gate-to-Source Reverse Leakage
–––
–––
-200
Qg
Total Gate Charge
–––
58
86
nC
Qgs
Gate-to-Source Charge
–––
19
28
Qgd
Gate-to-Drain ("Miller") Charge
–––
21
32
td(on)
Turn-On Delay Time
–––
19
–––
ns
tr
Rise Time
–––
90
–––
td(off)
Turn-Off Delay Time
–––
38
–––
tf
Fall Time
–––
54
–––
LD
Internal Drain Inductance
–––
4.5
–––
nH
Between lead,
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
2810
–––
pF
Coss
Output Capacitance
–––
420
–––
Crss
Reverse Transfer Capacitance
–––
200
–––
Coss
Output Capacitance
–––
1440
–––
Coss
Output Capacitance
–––
320
–––
Coss eff.
Effective Output Capacitance
–––
510
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
84
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
340
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
41
62
ns
Qrr
Reverse Recovery Charge
–––
54
81
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 51A
f
VDS = VGS, ID = 250µA
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
RG = 7.95Ω
ID = 51A
VDS = 25V, ID = 51A
VDD = 30V
ID = 51A
VGS = 20V
VGS = -20V
TJ = 25°C, IF = 51A, VDD = 30V
di/dt = 100A/µs
f
TJ = 25°C, IS = 51A, VGS = 0V f
showing the
integral reverse
p-n junction diode.
MOSFET symbol
VGS = 0V
VDS = 25V
VGS = 0V, VDS = 48V, ƒ = 1.0MHz
Conditions
VGS = 0V, VDS = 0V to 48V
VDS = 48V
VGS = 10V
f
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 10V
f


Numéro de pièce similaire - IRF1010EZLPBF

FabricantNo de pièceFiches techniqueDescription
logo
International Rectifier
IRF1010EZLPBF IRF-IRF1010EZLPBF Datasheet
413Kb / 12P
   Advanced Process Technology
More results

Description similaire - IRF1010EZLPBF

FabricantNo de pièceFiches techniqueDescription
logo
International Rectifier
IRF2804S-7P IRF-IRF2804S-7P Datasheet
263Kb / 10P
   AUTOMOTIVE MOSFET
IIRLR3105 IRF-IIRLR3105 Datasheet
169Kb / 8P
   AUTOMOTIVE MOSFET
IRF540ZL IRF-IRF540ZL Datasheet
310Kb / 12P
   AUTOMOTIVE MOSFET
IRF3205Z IRF-IRF3205Z Datasheet
303Kb / 12P
   AUTOMOTIVE MOSFET
IRLR2908 IRF-IRLR2908 Datasheet
206Kb / 11P
   AUTOMOTIVE MOSFET
IRLR024ZPBF IRF-IRLR024ZPBF Datasheet
281Kb / 12P
   AUTOMOTIVE MOSFET
logo
Kersemi Electronic Co.,...
IRFR2905Z KERSEMI-IRFR2905Z Datasheet
1Mb / 11P
   AUTOMOTIVE MOSFET
IRFU3505 KERSEMI-IRFU3505 Datasheet
4Mb / 11P
   AUTOMOTIVE MOSFET
logo
International Rectifier
IRF1405Z IRF-IRF1405Z Datasheet
291Kb / 12P
   AUTOMOTIVE MOSFET
IRFR3710Z IRF-IRFR3710Z Datasheet
218Kb / 11P
   AUTOMOTIVE MOSFET
IRLU2905Z IRF-IRLU2905Z Datasheet
217Kb / 11P
   AUTOMOTIVE MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com